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Monolayer molybdenum disulfide switches for 6G communication systems


Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to frequencies relevant to the fifth generation of wireless communication technology. Here we show that non-volatile switches made from monolayer molybdenum disulfide in a metal–insulator–metal structure can operate at frequencies corresponding to the sixth-generation communication band (around 100–500 GHz). The switches exhibit low insertion loss in the ON state and high isolation in the OFF state up to 480 GHz with sub-nanosecond pulse switching. We obtain the eye diagrams and constellation diagrams at various data transmission rates and modulations to evaluate the device performance, including real-time data communication up to 100 Gbit s−1 at a carrier frequency of 320 GHz, with a low bit error rate and high signal-to-noise ratio.

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Fig. 1: Material, device structure, and d.c. and pulse switching.
Fig. 2: High-frequency THz performance of MoS2 non-volatile switch.
Fig. 3: Data communication measurements.
Fig. 4: Eye diagrams with different data rates and modulation methods.
Fig. 5: Nonlinearity characteristics of MoS2 RF switches.

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Data availability

The data that support the plots within this paper and other findings of this study are available from the corresponding authors upon reasonable request.


  1. Wainstein, N., Adam, G., Yalon, E. & Kvatinsky, S. Radiofrequency switches based on emerging resistive memory technologies—a survey. Proc. IEEE 109, 77–95 (2020).

    Article  Google Scholar 

  2. Yalon, E. et al. Energy-efficient indirectly heated phase change RF switch. IEEE Electron Device Lett. 40, 455–458 (2019).

    Article  Google Scholar 

  3. Olsson, R. H., Bunch, K. & Gordon, C. Reconfigurable electronics for adaptive RF systems. In 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 1–4 (IEEE, 2016).

  4. Lee, J.-L., Zych, D., Reese, E. & Drury, D. M. Monolithic 2-18 GHz low loss, on-chip biased PIN diode switches. IEEE Trans. Microw. Theory Techn. 43, 250–256 (1995).

    Article  Google Scholar 

  5. Larson, L. E. Integrated circuit technology options for RFICs-present status and future directions. IEEE J. Solid-State Circuits 33, 387–399 (1998).

    Article  Google Scholar 

  6. Li, Q., Zhang, Y. P., Yeo, K. S. & Lim, W. M. 16.6- and 28-GHz fully integrated CMOS RF switches with improved body floating. IEEE Trans. Microw. Theory Techn. 56, 339–345 (2008).

    Article  Google Scholar 

  7. Brown, E. R. RF-MEMS switches for reconfigurable integrated circuits. IEEE Trans. Microw. Theory Techn. 46, 1868–1880 (1998).

    Article  Google Scholar 

  8. Stefanini, R., Chatras, M., Blondy, P. & Rebeiz, G. M. Miniature MEMS switches for RF applications. J. Microelectromech. Syst. 20, 1324–1335 (2011).

    Article  Google Scholar 

  9. Patel, C. D. & Rebeiz, G. M. A compact RF MEMS metal-contact switch and switching networks. IEEE Microw. Wireless Compon. Lett. 22, 642–644 (2012).

    Article  Google Scholar 

  10. Wang, M. & Rais-Zadeh, M. Development and evaluation of germanium telluride phase change material based ohmic switches for RF applications. J. Micromech. Microeng. 27, 013001 (2017).

    Article  Google Scholar 

  11. Madan, H. et al. 26.5 terahertz electrically triggered RF switch on epitaxial VO2-on-sapphire (VOS) wafer. In 2015 IEEE International Electron Devices Meeting (IEDM) 9.3.1–9.3.4 (IEEE, 2015).

  12. Pi, S., Ghadiri-Sadrabadi, M., Bardin, J. C. & Xia, Q. Nanoscale memristive radiofrequency switches. Nat. Commun. 6, 7519 (2015).

    Article  Google Scholar 

  13. Leon, A. et al. RF power-handling performance for direct actuation of germanium telluride switches. IEEE Trans. Microw. Theory Techn. 68, 60–73 (2019).

    Article  Google Scholar 

  14. El-Hinnawy, N., Slovin, G., Rose, J. & Howard, D. A 25 THz FCO (6.3 fs RONCOFF) phase-change material RF switch fabricated in a high volume manufacturing environment with demonstrated cycling > 1 billion times. In 2020 IEEE/MTT-S International Microwave Symposium (IMS) 45–48 (IEEE, 2020).

  15. Wong, H. S. P. et al. Metal–oxide RRAM. Proc. IEEE 100, 1951–1970 (2012).

    Article  Google Scholar 

  16. Wouters, D. J., Waser, R. & Wuttig, M. Phase-change and redox-based resistive switching memories. Proc. IEEE 103, 1274–1288 (2015).

    Article  Google Scholar 

  17. Field, M. et al. Vanadium dioxide phase change switches. In Proc. SPIE 9479, Open Architecture/Open Business Model Net-Centric Systems and Defense Transformation 2015 947908 (SPIE, 2015).

  18. El-Hinnawy, N. et al. Origin and optimization of RF power handling limitations in inline phase-change switches. IEEE Trans. Electron Devices 64, 3934–3942 (2017).

    Article  Google Scholar 

  19. Ge, R. et al. Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides. Nano Lett. 18, 434–441 (2017).

  20. Chappell, W. J., Hancock, T. M. & Olsson, R. H. Can phase change materials put the radio into software defined radio? In 2018 IEEE/MTT-S International Microwave Symposium—IMS 829–831 (IEEE, 2018).

  21. Kim, M. et al. Zero-static power radio-frequency switches based on MoS2 atomristors. Nat. Commun. 9, 2524 (2018).

    Article  Google Scholar 

  22. Kim, M. et al. Non-volatile RF and mm-wave switches based on monolayer hBN. In 2019 IEEE International Electron Devices Meeting (IEDM) 9.5.1–9.5.4 (IEEE, 2019).

  23. Kim, M. et al. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Nat. Electron. 3, 479–485 (2020).

    Article  Google Scholar 

  24. Petrov, V., Kurner, T. & Hosako, I. IEEE 802.15.3d: first standardization efforts for sub-terahertz band communications toward 6G. IEEE Commun. Mag. 58, 28–33 (2020).

    Article  Google Scholar 

  25. Dang, S., Amin, O., Shihada, B. & Alouini, M.-S. What should 6G be? Nat. Electron. 3, 20–29 (2020).

    Article  Google Scholar 

  26. Chowdhury, M. Z., Shahjalal, M., Ahmed, S. & Jang, Y. M. 6G wireless communication systems: applications, requirements, technologies, challenges, and research directions. IEEE Open J. Commun. Soc. 1, 957–975 (2020).

    Article  Google Scholar 

  27. Tariq, F. et al. A speculative study on 6G. IEEE Wireless Commun. 27, 118–125 (2020).

    Article  Google Scholar 

  28. Yang, P., Xiao, Y., Xiao, M. & Li, S. 6G wireless communications: vision and potential techniques. IEEE Netw. 33, 70–75 (2019).

    Article  MathSciNet  Google Scholar 

  29. Wu, X. et al. Thinnest nonvolatile memory based on monolayer h‐BN. Adv. Mater. 31, 1806790 (2019).

    Article  Google Scholar 

  30. Shi, Y. et al. Electronic synapses made of layered two-dimensional materials. Nat. Electron. 1, 458–465 (2018).

    Article  Google Scholar 

  31. Zhao, H. et al. Atomically thin femtojoule memristive device. Adv. Mater. 29, 1703232 (2017).

    Article  Google Scholar 

  32. Lee, Y. H. et al. Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. Nano Lett. 13, 1852–1857 (2013).

    Article  Google Scholar 

  33. Hus, S. M. et al. Observation of single-defect memristor in an MoS2 atomic sheet. Nat. Nanotechnol. 16, 58–62 (2021).

    Article  Google Scholar 

  34. Ge, R. et al. A library of atomically thin 2D materials featuring the conductive‐point resistive switching phenomenon. Adv. Mater. 33, 2007792 (2021).

    Article  Google Scholar 

  35. Cha, J., Cha, J. & Lee, S. Uncertainty analysis of two-step and three-step methods for deembedding on-wafer RF transistor measurements. IEEE Trans. Electron Devices 55, 2195–2201 (2008).

    Article  Google Scholar 

  36. Liu, A.-Q. RF MEMS Switches and Integrated Switching Circuits (Springer Science & Business Media, 2010).

  37. Zylbersztejn, A. & Mott, N. F. Metal-insulator transition in vanadium dioxide. Phys. Rev. B 11, 4383 (1975).

    Article  Google Scholar 

  38. Anagnostou, D. E., Torres, D., Teeslink, T. S. & Sepulveda, N. Vanadium dioxide for reconfigurable antennas and microwave devices: enabling RF reconfigurability through smart materials. IEEE Antennas Propag. Mag. 62, 58–73 (2020).

    Article  Google Scholar 

  39. Hillman, C., Stupar, P. & Griffith, Z. Scaleable vanadium dioxide switches with submillimeterwave bandwidth: VO2 switches with impoved RF bandwidth and power handling. In 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 1–4 (IEEE, 2017).

  40. Lee, S. et al. 300-GHz CMOS-based wireless link using 40-dBi Cassegrain antenna for IEEE Standard 802.15.3d. In 2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) 136–138 (IEEE, 2020).

  41. Cascade Microtech Application Note. On Wafer Vector Network Analyzer Calibration and Measurements. (Publication Name PYRPROBE-0597, 1997).

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This work was supported in part by the Office of Naval Research (grant N00014-20-1-2104) and the Air Force Research Laboratory (award FA9550-21-1-0460). D.A. acknowledges the Presidential Early Career Award for Scientists and Engineers (PECASE) through the Army Research Office (award W911NF-16-1-0277). The fabrication was partly done at the Texas Nanofabrication Facility supported by NSF grant NNCI-1542159. M.K. acknowledges the UK Brand Research Fund (1.220028.01) of UNIST. E.P. acknowledges funding from the ANR SWIT project (ANR-19-CE24-0004). The data communication setup used for the BER measurements was partially funded by an ANR TERASONIC grant, Contrat de Plan Etat-Region (CPER) Photonics for Society (P4S) and DYDICO cluster of the I-site ULNE. The development of some parts of the setup was also enabled using devices from RENATECH, the French nanofabrication network. The THz communication setup is also supported by the ANR SPATIOTERA project, TERIL-WAVES project, Nano-FUTUR Equipex Program (ANR-21-ESRE-0012) of the ‘Plan d’Investissement d’Avenir (PIA)’ and also supported by the IEMN UHD Flagship and CPER WaveTech@HdF.

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Authors and Affiliations



M.K. performed the material transfer, characterization, device fabrication and low-frequency measurements. E.P., G.D. and S.S. contributed to the high-frequency measurements. G.D., E.P. and P.S. conducted the BER, SNR, eye diagram and constellation diagram measurements. N.W., K.S. and E.Y. contributed to the pulse measurement of the MoS2 device. M.K., S.J.Y., E.P., G.D. and D.A. analysed the electrical data and characteristics. All the authors contributed to the article based on the draft written by M.K., E.P., G.D. and D.A. E.Y., E.P., H.H. and D.A. initiated and supervised the collaborative research.

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Correspondence to Emiliano Pallecchi or Deji Akinwande.

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Nature Electronics thanks Mircea Dragoman, Frank Schwierz and Lei Ye for their contribution to the peer review of this work.

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Supplementary information

Supplementary Information

Supplementary Figs. 1–11, Notes 1 and 2 and Table 1.

Supplementary Video

Measurement demonstration.

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Kim, M., Ducournau, G., Skrzypczak, S. et al. Monolayer molybdenum disulfide switches for 6G communication systems. Nat Electron 5, 367–373 (2022).

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