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Transistor qubits heat up

Nature Electronics volume 5, pages 131–132 (2022)Cite this article

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An Author Correction to this article was published on 27 April 2022

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Hole spin qubits that operate at temperatures close to 4 K can be created in fin field-effect transistors similar to those used in advanced integrated circuits.

Seventy five years after its invention, the transistor is ubiquitous in electronics, and the deterministic channel conductance modulation in field-effect transistors (FETs) controls the operation and behaviour of entire integrated circuits. This classical working principle is, however, in contrast to that of a quantum circuit. The building block of a quantum processor is a two-level system — a quantum bit or qubit — that lives as a superposition of 0 and 1. The outcome of a quantum circuit is statistical (we will know the probability of being in a certain state) and quantum bits can be encoded in various physical supports including photons, ions and superconducting circuits.

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Fig. 1: Silicon spin qubit platforms and their operating temperatures.

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References

  1. Camenzind, L. C. et al. Nat. Electron. https://doi.org/10.1038/s41928-022-00722-0 (2022).

    Article  Google Scholar 

  2. Veldhorst, M. et al. Nat. Nanotechnol. 9, 981–985 (2014).

    Article  Google Scholar 

  3. Yoneda, J. et al. Nat. Nanotechnol. 13, 102–106 (2018).

    Article  Google Scholar 

  4. Xue, X. et al. Nature 593, 205–210 (2021).

    Article  Google Scholar 

  5. Maurand, R. et al. Nat. Commun. 7, 13575 (2016).

    Article  Google Scholar 

  6. Yang, C. H. et al. Nature 580, 350–354 (2020).

    Article  Google Scholar 

  7. Petit, L. et al. Nature 580, 355–359 (2020).

    Article  Google Scholar 

Download references

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  1. CEA-Grenoble, Université Grenoble Alpes and Grenoble-INP, PHELIQS laboratory, Grenoble, France

    Romain Maurand & Xavier Jehl

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  1. Romain Maurand
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  2. Xavier Jehl
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Correspondence to Romain Maurand or Xavier Jehl.

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The authors declare no competing interests.

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Maurand, R., Jehl, X. Transistor qubits heat up. Nat Electron 5, 131–132 (2022). https://doi.org/10.1038/s41928-022-00736-8

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