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Atomically thin indium oxide transistors

Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.

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Fig. 1: Scaled In2O3 transistors.


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Correspondence to Seong Keun Kim.

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Kim, S.K. Atomically thin indium oxide transistors. Nat Electron 5, 129–130 (2022).

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