Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.
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Kim, S.K. Atomically thin indium oxide transistors. Nat Electron 5, 129–130 (2022). https://doi.org/10.1038/s41928-022-00734-w