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SCALED DEVICES

Atomically thin indium oxide transistors

Nature Electronics volume 5, pages 129–130 (2022)Cite this article

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Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.

Over the past few decades, advances in integrated circuits and computer technology have been underpinned by the continuous reduction in semiconductor device sizes. As we move into the fourth industrial revolution, and the widespread application of big data analysis, the Internet of Things and artificial intelligence, more extreme scaling down to sub-5-nm technology nodes is needed. At these scales, however, silicon technology reaches its intrinsic limits, leading to degradation of mobility and stronger short-channel effects1.

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Fig. 1: Scaled In2O3 transistors.

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Authors and Affiliations

  1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, South Korea

    Seong Keun Kim

  2. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, South Korea

    Seong Keun Kim

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  1. Seong Keun Kim
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Correspondence to Seong Keun Kim.

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The author declares no competing interests.

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Kim, S.K. Atomically thin indium oxide transistors. Nat Electron 5, 129–130 (2022). https://doi.org/10.1038/s41928-022-00734-w

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  • DOI: https://doi.org/10.1038/s41928-022-00734-w

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