Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

TWO-DIMENSIONAL MATERIALS

Inorganic molecular crystals for 2D electronics

Nature Electronics volume 4, pages 870–871 (2021)Cite this article

Subjects

Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.

The digital logic circuit industry relies on silicon as a semiconducting material and complementary metal–oxide–semiconductor (CMOS) cells as elementary building blocks. Such silicon technology is, however, approaching its scaling limits1. This is owing to a drop in mobility at reduced channel thicknesses and to increasing short-channel effects at channel dimensions with physical gate lengths below 20 nm (corresponding to the 5-nm technology node and beyond)2. One potential solution is to use channels made of two-dimensional (2D) semiconductors3 such as molybdenum disulfide (MoS2). With their atomic thinness, these materials can, in theory, overcome the scaling limits of silicon.

This is a preview of subscription content, access via your institution

Access options

Rent or buy this article

Get just this article for as long as you need it

$39.95

Learn more

Prices may be subject to local taxes which are calculated during checkout

Fig. 1: The development of MoS2 FETs with Sb2O3 insulators.

References

  1. Waldrop, M. M. Nature 530, 144–147 (2016).

    Article  Google Scholar 

  2. International Roadmap for Devices and Systems (IRDS) 2021 Edition (IEEE, 2021); https://irds.ieee.org/editions/2021/

  3. Fiori, G. et al. Nat. Nanotechnol. 9, 768–779 (2014).

    Article  Google Scholar 

  4. Knobloch, T. et al. Nat. Electron. 4, 98–108 (2021).

    Article  Google Scholar 

  5. Liu, K. et al. Nat. Electron. https://doi.org/10.1038/s41928-021-00683-w (2021).

  6. Illarionov, Y. et al. Nat. Electron. 2, 230–235 (2019).

    Article  Google Scholar 

  7. Li, W. et al. Nat. Electron. 2, 563–571 (2019).

    Article  Google Scholar 

  8. Fleetwood, D. M. IEEE Trans. Nucl. Sci. 39, 269–271 (1992).

    Article  Google Scholar 

  9. Li, T. et al. Nat. Electron. 3, 473–478 (2020).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute for Microelectronics (TU Wien), Vienna, Austria

    Yury Yu. Illarionov, Theresia Knobloch & Tibor Grasser

  2. Ioffe Institute, St. Petersburg, Russia

    Yury Yu. Illarionov

Authors
  1. Yury Yu. Illarionov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Theresia Knobloch
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Tibor Grasser
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to Yury Yu. Illarionov or Tibor Grasser.

Ethics declarations

Competing interests

The authors declare no competing interests.

Rights and permissions

Reprints and Permissions

About this article

Verify currency and authenticity via CrossMark

Cite this article

Illarionov, Y.Y., Knobloch, T. & Grasser, T. Inorganic molecular crystals for 2D electronics. Nat Electron 4, 870–871 (2021). https://doi.org/10.1038/s41928-021-00691-w

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1038/s41928-021-00691-w

Search

Advanced search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing