Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.
This is a preview of subscription content, access via your institution
Access options
Access Nature and 54 other Nature Portfolio journals
Get Nature+, our best-value online-access subscription
$29.99 / 30 days
cancel any time
Subscribe to this journal
Receive 12 digital issues and online access to articles
$119.00 per year
only $9.92 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
References
Waldrop, M. M. Nature 530, 144–147 (2016).
International Roadmap for Devices and Systems (IRDS) 2021 Edition (IEEE, 2021); https://irds.ieee.org/editions/2021/
Fiori, G. et al. Nat. Nanotechnol. 9, 768–779 (2014).
Knobloch, T. et al. Nat. Electron. 4, 98–108 (2021).
Liu, K. et al. Nat. Electron. https://doi.org/10.1038/s41928-021-00683-w (2021).
Illarionov, Y. et al. Nat. Electron. 2, 230–235 (2019).
Li, W. et al. Nat. Electron. 2, 563–571 (2019).
Fleetwood, D. M. IEEE Trans. Nucl. Sci. 39, 269–271 (1992).
Li, T. et al. Nat. Electron. 3, 473–478 (2020).
Author information
Authors and Affiliations
Corresponding authors
Ethics declarations
Competing interests
The authors declare no competing interests.
Rights and permissions
About this article
Cite this article
Illarionov, Y.Y., Knobloch, T. & Grasser, T. Inorganic molecular crystals for 2D electronics. Nat Electron 4, 870–871 (2021). https://doi.org/10.1038/s41928-021-00691-w
Published:
Issue Date:
DOI: https://doi.org/10.1038/s41928-021-00691-w
