Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.
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References
Fert, A. Rev. Mod. Phys. 80, 1517–1530 (2008).
Maekawa, S., Valenzuela, S. O., Saitoh, E. & Kimura, T. Spin Current (Oxford Univ. Press, 2017).
Žutić, I., Fabian, J. & Das Sarma, S. Rev. Mod. Phys. 76, 323–410 (2004).
Sinova, J., Valenzuela, S. O., Wunderlich, J., Back, C. H. & Jungwirth, T. Rev. Mod. Phys. 87, 1213–1260 (2015).
Di Sante, D., Barone, P., Bertacco, R. & Picozzi, S. Adv. Mater. 25, 509–513 (2013).
Rinaldi, C. et al. Nano Lett. 18, 2751–2758 (2018).
Noël, P. et al. Nature 580, 483–486 (2020).
Varotto, S. et al. Nat. Electron. https://doi.org/10.1038/s41928-021-00653-2 (2021).
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Fei, R., Yang, L. Room-temperature ferroelectric switching. Nat Electron 4, 703–704 (2021). https://doi.org/10.1038/s41928-021-00660-3
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DOI: https://doi.org/10.1038/s41928-021-00660-3