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THERMAL MANAGEMENT

Integrating boron arsenide into power devices

Nature Electronics volume 4, pages 380–381 (2021)Cite this article

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Boron arsenide could be used as a high-thermal-conductivity cooling substrate in gallium nitride power devices.

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Fig. 1: High-thermal-conductivity substrates in heterointegrated GaN HEMTs.

References

  1. Amano, H. et al. J. Phys. D 51, 163001 (2018).

    Article  Google Scholar 

  2. Yates, L. et al. Characterization of the thermal conductivity of CVD diamond for GaN-on-diamond devices. In 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS 2016) 106–109 (IEEE, 2016).

  3. Won, Y., Cho, J., Agonafer, D., Asheghi, M. & Goodson, K. E. IEEE Trans. Compon. Packag. Manuf. Technol. 5, 737–744 (2015).

    Article  Google Scholar 

  4. Graebner, J. E., Jin, S., Kammlott, G. W., Herb, J. A. & Gardinier, C. F. Nature 359, 401–403 (1992).

    Article  Google Scholar 

  5. Liu, T. et al. IEEE Electron Dev. Lett. 38, 1417–1420 (2017).

    Article  Google Scholar 

  6. Ohki, T. et al. IEEE Electron Dev. Lett. 40, 287–290 (2018).

    Article  Google Scholar 

  7. Yates, L. et al. ACS Appl. Mater. Interfaces 10, 24302–24309 (2018).

    Article  Google Scholar 

  8. Cheng, Z., Mu, F., Yates, L., Suga, T. & Graham, S. ACS Appl. Mater. Interfaces 12, 8376–8384 (2020).

    Article  Google Scholar 

  9. Yates, L. et al. ACS Appl. Mater. Interfaces 10, 24302–24309 (2018).

    Article  Google Scholar 

  10. Feng, T., Lindsay, L. & Ruan, X. Phys. Rev. B 96, 161201 (2017).

    Article  Google Scholar 

  11. Kang, J. S. et al. Nat. Electron. https://doi.org/10.1038/s41928-021-00595-9 (2021).

    Article  Google Scholar 

  12. Choi, S. et al. IEEE Trans. Electron Dev. 60, 1898–1904 (2013).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, USA

    Samuel Graham

  2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA

    Samuel Graham

  3. Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA, USA

    Sukwon Choi

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  1. Samuel Graham
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  2. Sukwon Choi
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Correspondence to Samuel Graham.

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Graham, S., Choi, S. Integrating boron arsenide into power devices. Nat Electron 4, 380–381 (2021). https://doi.org/10.1038/s41928-021-00604-x

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