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A vertical transistor with a sub-1-nm channel

Sub-1-nm vertical field-effect transistors can be created by transferring pre-made metal film contacts onto two-dimensional materials.

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Fig. 1: Sub-1-nm vertical transistors based on MoS2 monolayers.


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Correspondence to PingAn Hu.

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The authors declare no competing interests.

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Zhang, J., Gao, F. & Hu, P. A vertical transistor with a sub-1-nm channel. Nat Electron 4, 325 (2021).

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