Tellurium can form nanowires of helical atomic chains. With their unique one-dimensional van der Waals structure, these nanowires are expected to show physical and electronic properties that are remarkably different from those of bulk tellurium. Here, we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With this approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5 × 108 A cm−2 that exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors with a diameter of only 2 nm.
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The data that support the plots within this paper and other findings of this study are available from the corresponding author upon reasonable request.
Wang, Y. et al. Field-effect transistors made from solution-grown two-dimensional tellurene. Nat. Electron. 1, 228–236 (2018).
Qiu, G. et al. Quantum transport and band structure evolution under high magnetic field in few-layer tellurene. Nano Lett. 18, 5760–5767 (2018).
Zhu, Z. et al. Multivalency-driven formation of Te-based monolayer materials: a combined first-principles and experimental study. Phys. Rev. Lett. 119, 106101 (2017).
Peng, H., Kioussis, N. & Snyder, G. J. Elemental tellurium as a chiral p-type thermoelectric material. Phys. Rev. B 89, 195206 (2016).
Qiu, G. et al. High-performance few-layer tellurium CMOS devices enabled by atomic layer deposited dielectric doping technique. In Proceedings of the 76th Device Research Conference (IEEE, 2018).
Agapito, L., Kioussis, N., Goddard, W. A. III & Ong, N. P. Novel family of chiral-based topological insulators: elemental tellurium under strain. Phys. Rev. Lett. 110, 176401 (2013).
Hirayama, M., Okugawa, R., Ishibashi, S., Murakami, S. & Miyake, T. Weyl node and spin texture in trigonal tellurium and selenium. Phys. Rev. Lett. 114, 206401 (2015).
Nakayama, K. et al. Band splitting and Weyl nodes in trigonal tellurium studied by angle-resolved photoemission spectroscopy and density functional theory. Phys. Rev. B 95, 125204 (2017).
Wang, Q. S. et al. Van der Waals epitaxy and photoresponse of hexagonal tellurium nanoplates on flexible mica sheets. ACS Nano 8, 7497–7505 (2014).
Amani, M. et al. Solution-synthesized high-mobility tellurium nanoflakes for short-wave infrared photodetectors. ACS Nano 12, 7253–7263 (2018).
Lee, T. et al. High-power density piezoelectric energy harvesting using radially strained ultrathin trigonal tellurium nanowire assembly. Adv. Mater. 25, 2920–2925 (2013).
Lin, S. Q. et al. Tellurium as a high-performance elemental thermoelectric. Nat. Commun. 7, 10287 (2016).
Qiu, G. et al. Thermoelectric performance of 2D tellurium with accumulation contacts. Nano Lett. 19, 1955–1962 (2019).
Doi, T., Nakao, K. & Kamimura, H. The valence band structure of tellurium. I. The k·p perturbation method. J. Phys. Soc. Jpn 28, 36–43 (1970).
Martin, R. M., Lucovsky, G. & Helliwell, K. Intermolecular bonding and lattice dynamics of Se and Te. Phys. Rev. B 13, 1383–1395 (1976).
Du, Y. C. et al. One-dimensional van der Waals material tellurium: Raman spectroscopy under strain and magneto-transport. Nano Lett. 17, 3965–3973 (2017).
Medeiros, P. V. C., Marks, S., Wynn, J. M. & Vasylenko, A. Single-atom scale structural selectivity in Te nanowires encapsulated inside ultranarrow, single-walled carbon nanotubes. ACS Nano 11, 6178–6185 (2017).
Pham, T. et al. Torsional instability in the single-chain limit of a transition metal trichalcogenide. Science 361, 263–266 (2018).
Kobayashi, K. & Yasuda, H. Structural transition of tellurium encapsulated in confined one-dimensional nanospaces depending on the diameter. Chem. Phys. Lett. 634, 60–65 (2015).
Li, H. et al. From bulk to monolayer MoS2: evolution of Raman scattering. Adv. Funct. Mater. 22, 1385–1390 (2012).
Desai, S. B. et al. MoS2 transistors with 1-nanometer gate lengths. Science 354, 99–102 (2016).
Javey, A. et al. High-field quasiballistic transport in short carbon nanotubes. Phys. Rev. Lett. 92, 106804 (2004).
Komsa, H.-P., Senga, R., Suenaga, K. & Krasheninnikov, A. V. Structural distortions and charge density waves in iodine chains encapsulated inside carbon nanotubes. Nano Lett. 17, 3694–3700 (2017).
Walker, K. E. et al. Growth of carbon nanotubes inside boron nitride nanotubes by coalescence of fullerenes: toward the world’s smallest coaxial cable. Small Methods 1, 1700184 (2017).
Nieto-Ortega, B. et al. Band-gap opening in metallic single-walled carbon nanotubes by encapsulation of an organic salt. Angew. Chem. Int. Ed. 56, 12240–12244 (2017).
Franklin, A. D. & Chen, Z. Length scaling of carbon nanotube transistors. Nat. Nanotechnol. 5, 858–862 (2010).
Seidel, R. V. et al. Bias dependence and electrical breakdown of small diameter single-walled carbon nanotubes. J. Appl. Phys. 96, 6694–6699 (2004).
Plechinger, G. et al. Scanning Raman spectroscopy of few- and single-layer MoS2 flakes. Proc. SPIE 8463, 84630N (2012).
Wang, X. et al. Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotechnol. 10, 517–521 (2015).
Coker, A., Lee, T. & Das, T. P. Investigation of the electronic properties of tellurium-energy-band structure. Phys. Rev. B 22, 2968–2975 (1980).
Andharia, E. et al. Exfoliation energy, quasiparticle band structure, and excitonic properties of selenium and tellurium atomic chains. Phys. Rev. B 98, 035420 (2018).
Pham, T. et al. A universal wet-chemistry route to metal filling of boron nitride nanotubes. Nano Lett. 16, 320–325 (2016).
Nautiyal, P., Gupta, A., Seal, S., Boesl, B. & Agarwal, A. Reactive wetting and filling of boron nitride nanotubes by molten aluminum during equilibrium solidification. Acta Mater. 126, 124–131 (2017).
Lee, C. H., Xie, M., Kayastha, V., Wang, J. & Yap, Y. K. Patterned growth of boron nitride nanotubes by catalytic chemical vapor deposition. Chem. Mater. 22, 1782–1787 (2010).
Lee., C. H. et al. Room-temperature tunneling behavior of boron nitride nanotubes functionalized with gold quantum dots. Adv. Mater. 25, 4544–4548 (2013).
Huang, J. W. et al. Superior current carrying capacity of boron nitride encapsulated carbon nanotubes with zero-dimensional contacts. Nano Lett. 15, 6836–6840 (2015).
Pine, A. S. & Dresselhaus, G. Raman spectra and lattice dynamics of tellurium. Phys. Rev. B 4, 356–371 (1971).
Wurz, J., Logeeswaran, V. J., Sarkar, A. & Saif Islam, M. High current density and failure mechanism in epitaxially bridged silicon nanowires. In Proceedings of 8th IEEE Conference on Nanotechnology (IEEE, 2008).
Liang, W. et al. Field-effect modulation of Seebeck coefficient in single PbSe nanowires. Nano Lett. 9, 1689–1693 (2009).
Tang, J. et al. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors. Nanotechnology 21, 505704 (2010).
Nie, A., Liu, J., Dong, C. & Wang, H. Electrical failure behaviors of semiconductor oxide nanowires. Nanotechnology 22, 405703 (2011).
Westover, T. et al. Photoluminescence, thermal transport, and breakdown in Joule-heated GaN nanowires. Nano Lett. 9, 257–263 (2008).
Wallentin, J. et al. Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires. Nano Lett. 11, 2286–2290 (2011).
Dayeh, S. A., Susac, D., Kavanagh, K. L., Yu, E. T. & Wang, D. Field dependent transport properties in InAs nanowire field effect transistors. Nano Lett. 8, 3114–3119 (2008).
Hu, Y. et al. Observation of a 2D electron gas and the tuning of the electrical conductance of ZnO nanowires by controllable surface band bending. Adv. Funct. Mater. 19, 2380–2387 (2009).
Stolyarov, M. A. et al. Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications. Nanoscale 8, 15774–15782 (2016).
Geremew, A. et al. Current carrying capacity of quasi-1D ZrTe3 van der Waals nanoribbons. IEEE Electron Device Lett. 39, 735–738 (2018).
Jo, I. et al. Thermal conductivity and phonon transport in suspended few-layer hexagonal boron nitride. Nano Lett. 13, 550–554 (2013).
Wang, J. et al. High mobility MoS2 transistor with low Schottky barrier contact by using atomic thick h-BN as a tunneling layer. Adv. Mater. 28, 8302–8308 (2016).
Pan, Y., Gao, S., Yang, L. & Lu, J. Dependence of excited-state properties of tellurium on dimensionality: from bulk to two dimensions to one dimension. Phys. Rev. B 98, 085135 (2018).
Léonard, F. & Tersoff, J. Role of Fermi-level pinning in nanotube Schottky diodes. Phys. Rev. Lett. 84, 4693 (2000).
Liu, H., Neal, A. T. & Ye, P. D. Channel length scaling of MoS2 MOSFETs. ACS Nano 6, 8563–8569 (2012).
Miao, J., Zhang, S., Cai, L., Scherr, M. & Wang, C. Ultrashort channel length black phosphorus field-effect transistors. ACS Nano 9, 9236–9243 (2015).
Berweger, S. et al. Imaging carrier inhomogeneitties in ambipolar tellurene field effect transistors. Nano Lett. 19, 1289–1284 (2019).
Dresselhaus, M. S., Dresselhaus, G., Saito, R. & Jorio, A. Raman spectroscopy of carbon nanotubes. Phys. Rep. 409, 47–99 (2005).
P.D.Y. was supported by NSF/AFOSR under EFRI 2DARE grant no. EFMA-1433459, ARO grant no. W911NF-15-1-0574 and ASCENT, one of six centres in JUMP, a Semiconductor Research Corporation (SRC) programme sponsored by DARPA. P.D.Y. and W.W. were also supported by ARO grant no. W911NF-17-1-0573 and NSF under grant no. CMMI-1762698. J.J. and H.W. acknowledge support from the US Office of Naval Research for the TEM effort. S.G. and L.Y. are supported by National Science Foundation (NSF) CAREER grant no. DMR-1455346 and Air Force Office of Scientific Research (AFOSR) grant no. FA9550-17-1-0304. M.J.K. was supported in part by the Global Research and Development Center Program (2018K1A4A3A01064272) and Brain Pool Program (2019H1D3A2A01061938) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT. Computational resources were provided by the Stampede of Teragrid at the Texas Advanced Computing Center (TACC) through XSEDE.
The authors declare no competing interests.
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Qin, J., Liao, P., Si, M. et al. Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes. Nat Electron (2020). https://doi.org/10.1038/s41928-020-0365-4