Resistive memory technologies could be used to create intelligent systems that learn locally at the edge. However, current approaches typically use learning algorithms that cannot be reconciled with the intrinsic non-idealities of resistive memory, particularly cycle-to-cycle variability. Here, we report a machine learning scheme that exploits memristor variability to implement Markov chain Monte Carlo sampling in a fabricated array of 16,384 devices configured as a Bayesian machine learning model. We apply the approach experimentally to carry out malignant tissue recognition and heart arrhythmia detection tasks, and, using a calibrated simulator, address the cartpole reinforcement learning task. Our approach demonstrates robustness to device degradation at ten million endurance cycles, and, based on circuit and system-level simulations, the total energy required to train the models is estimated to be on the order of microjoules, which is notably lower than in complementary metal–oxide–semiconductor (CMOS)-based approaches.
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We acknowledge funding support from the French ANR via Carnot funding as well as the H2020 MeM-Scales project (871371) and the European Research Council (grant NANOINFER, no. 715872). In addition, we thank E. Esmanhotto, J. Sandrini and C. Cagli (CEA-Leti) for help with the measurement set-up, J. F. Nodin (CEA-Leti) for providing the images in Fig. 3d and to S. Mitra (Stanford University), M. Payvand (ETH Zurich), A. Valentian, M. Solinas-Angel, E. Nowak (CEA-Leti), J. Diard (CNRS, Université Grenoble Alpes), P. Bessiére and J. Droulez (CNRS, Sorbonne Université), J. Grollier (CNRS, Thales) and J.-M. Portal (Aix-Marseille Université) for discussing various aspects of the Article.
The authors declare no competing interests.
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Dalgaty, T., Castellani, N., Turck, C. et al. In situ learning using intrinsic memristor variability via Markov chain Monte Carlo sampling. Nat Electron 4, 151–161 (2021). https://doi.org/10.1038/s41928-020-00523-3