Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

  • News & Views
  • Published:

RADIATION-HARDENED ELECTRONICS

Repairable integrated circuits for space

Field-effect transistors that use carbon nanotubes as the channel material and an ion gel as the gate exhibit a high tolerance to radiation and can be recovered following radiation damage using a simple annealing process.

This is a preview of subscription content, access via your institution

Access options

Buy this article

Prices may be subject to local taxes which are calculated during checkout

Fig. 1: Radiation-immune carbon nanotube field-effect transistors.

References

  1. Zhu, M. et al. Nat. Electron. https://doi.org/10.1038/s41928-020-0465-1 (2020).

  2. Dabrowski, W. et al. Conf. Rec. 1991 IEEE Nucl. Sci. Symp. Med. Imaging Conf. https://doi.org/10.1109/NSSMIC.1991.259168 (1991).

  3. Kaya, S., Jaksic, A. & Yilmaz, E. Radiat. Phys. Chem. 149, 7–13 (2018).

    Article  Google Scholar 

  4. Han, J. W., Seol, M. L., Moon, D.-I., Hunter, G. & Meyyappan, M. Nat. Electron. 2, 405–411 (2019).

    Article  Google Scholar 

  5. Han, J. W., Ahn, J. H. & Choi, Y. K. J. Vac. Sci. Technol. B 29, 011014 (2011).

    Article  Google Scholar 

  6. Zhu, M. G., Zhang, Z. & Peng, L. M. Adv. Electron. Mater. 5, 1900313 (2019).

    Article  Google Scholar 

  7. Zhao, Y. et al. Carbon 108, 363–371 (2016).

    Article  Google Scholar 

  8. Technology Readiness Level (NASA, 28 October 2012); http://go.nature.com/2HLCi4W

  9. Ling, H. et al. Appl. Phys. Rev. 7, 011307 (2020).

    Article  Google Scholar 

  10. Lenz, J., del Giudice, F., Geisenhof, F. R., Winterer, F. & Weitz, R. T. Nat. Nanotechnol. 14, 579–585 (2019).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Lin Xiao.

Ethics declarations

Competing interests

The authors declare no competing interests.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Wang, Y., Xiao, L. Repairable integrated circuits for space. Nat Electron 3, 586–587 (2020). https://doi.org/10.1038/s41928-020-00491-8

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1038/s41928-020-00491-8

Search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing