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THREE-DIMENSIONAL INTEGRATION

Adding a new layer to ‘more than Moore’

Nature Electronics volume 2, pages 497–498 (2019)Cite this article

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Silicon circuits with increased functionality and device density can be created by directly integrating amorphous oxide semiconductor devices on top of them.

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Fig. 1: Monolithic integration of high-voltage amorphous oxide semiconductor thin-film devices and low-voltage silicon ICs.

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  1. King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, Saudi Arabia

    Hendrik Faber & Thomas D. Anthopoulos

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  1. Hendrik Faber
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  2. Thomas D. Anthopoulos
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Correspondence to Hendrik Faber or Thomas D. Anthopoulos.

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Faber, H., Anthopoulos, T.D. Adding a new layer to ‘more than Moore’. Nat Electron 2, 497–498 (2019). https://doi.org/10.1038/s41928-019-0329-8

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