The nitrogen–vacancy (NV) centre in diamond can be used as a solid-state quantum sensor with applications in magnetometry, electrometry, thermometry and chemical sensing. However, to deliver practical applications, existing NV-based sensing techniques, which are based on bulky and discrete instruments for spin control and detection, must be replaced by more compact designs. Here we show that NV-based quantum sensing can be integrated with complementary metal–oxide–semiconductor (CMOS) technology to create a compact and scalable platform. Using standard CMOS technology, we integrate the essential components for NV control and measurement—microwave generator, optical filter and photodetector—in a 200 μm × 200 μm footprint. With this platform we demonstrate quantum magnetometry with a sensitivity of 32.1 μT Hz−1/2 and simultaneous thermometry.
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The data that support the plots within this paper and other findings of this study are available from the corresponding author upon reasonable request.
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This research is supported in part by the Army Research Office Multidisciplinary University Research Initiative (ARO MURI) biological transduction programme. D.K. acknowledges financial support from the Kwanjeong Educational Foundation. M.I.I. acknowledges support from the Singaporean-MIT Research Alliance (SMART) and the MIT Center of Integrated Circuits and Systems. C.F. acknowledges support from Master Dynamic Limited and from the National Science Foundation (NSF) Research Advanced by Interdisciplinary Science and Engineering (RAISE) Transformational Advances in Quantum Systems (TAQS). M.E.T. acknowledges support by an appointment to the Intelligence Community Postdoctoral Research Fellowship Program at MIT, administered by Oak Ridge Institute for Science and Education through an interagency agreement between the US Department of Energy and the Office of the Director of National Intelligence.
The chip-scale spin control and detection scheme in this work has been filed in a United States provisional patent application (62/623151).
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Kim, D., Ibrahim, M.I., Foy, C. et al. A CMOS-integrated quantum sensor based on nitrogen–vacancy centres. Nat Electron 2, 284–289 (2019). https://doi.org/10.1038/s41928-019-0275-5
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