A transistor based on spin rather than charge—a spin transistor—could potentially offer non-volatile data storage and improved performance compared with traditional transistors. Many approaches have been explored to realize spin transistors, but their development remains a considerable challenge. The recent discovery of two-dimensional magnetic insulators such as chromium triiodide (CrI3), which offer electrically switchable magnetic order and an effective spin filtering effect, can provide new operating principles for spin transistors. Here, we report spin tunnel field-effect transistors (TFETs) based on dual-gated graphene/CrI3/graphene tunnel junctions. The devices exhibit an ambipolar behaviour and tunnel conductance that is dependent on the magnetic order in the CrI3 tunnel barrier. The gate voltage switches the tunnel barrier between interlayer antiferromagnetic and ferromagnetic states under a constant magnetic bias near the spin-flip transition, thus effectively and reversibly altering the device between a low and a high conductance state, with large hysteresis. By electrically controlling the magnetization configurations instead of the spin current, our spin TFETs achieve a high–low conductance ratio approaching 400%, suggesting they could be of value in the development of non-volatile memory applications.
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The data supporting the plots within this paper and other findings of this study are available from the corresponding authors upon request.
Datta, S. & Das, B. Electronic analog of the electro–optic modulator. Appl. Phys. Lett. 56, 665–667 (1990).
Žutić, I., Fabian, J. & Das Sarma, S. Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004).
Awschalom, D. D. & Flatté, M. E. Challenges for semiconductor spintronics. Nat. Phys. 3, 153–159 (2007).
Sugahara, S. & Nitta, J. Spin-transistor electronics: an overview and outlook. Proc. IEEE 98, 2124–2154 (2010).
Yan, W. et al. A two-dimensional spin field-effect switch. Nat. Commun. 7, 13372 (2016).
Dankert, A. & Dash, S. P. Electrical gate control of spin current in van der Waals heterostructures at room temperature. Nat. Commun. 8, 16093 (2017).
Koo, H. C. et al. Control of spin precession in a spin-injected field effect transistor. Science 325, 1515 (2009).
Chuang, P. et al. All-electric all-semiconductor spin field-effect transistors. Nat. Nanotechnol. 10, 35–39 (2014).
Huang, B. et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 546, 270–273 (2017).
Gong, C. et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 546, 265–269 (2017).
Yao, T., Mason, J. G., Huiwen, J., Cava, R. J. & Kenneth, S. B. Magneto-elastic coupling in a potential ferromagnetic 2D atomic crystal. 2D Mater. 3, 025035 (2016).
Lee, J.-U. et al. Ising-type magnetic ordering in atomically thin FePS3. Nano Lett. 16, 7433–7438 (2016).
Bonilla, M. et al. Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates. Nat. Nanotechnol. 13, 289–293 (2018).
O’Hara, D. J. et al. Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit. Nano Lett. 18, 3125–3131 (2018).
Du, K.-z et al. Weak van der Waals stacking, wide-range band gap, and Raman study on ultrathin layers of metal phosphorus trichalcogenides. ACS Nano 10, 1738–1743 (2016).
Zhou, B. et al. Possible structural transformation and enhanced magnetic fluctuations in exfoliated α-RuCl3. J. Phys. Chem. Solids (in the press).
Wang, Z. et al. Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor. Nat. Nanotechnol. 13, 554–559 (2018).
Deng, Y. J. et al. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2. Nature 563, 94–99 (2018).
Ghazaryan, D. et al. Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3. Nat. Electron. 1, 344–349 (2018).
McGuire, M. A. Crystal and magnetic structures in layered, transition metal dihalides and trihalides. Crystals 7, 121 (2017).
Jiang, S., Shan, J. & Mak, K. F. Electric-field switching of two-dimensional van der Waals magnets. Nat. Mater. 17, 406–410 (2018).
Jiang, S., Li, L., Wang, Z., Mak, K. F. & Shan, J. Controlling magnetism in 2D CrI3 by electrostatic doping. Nat. Nanotechnol. 13, 549–553 (2018).
Huang, B. et al. Electrical control of 2D magnetism in bilayer CrI3. Nat. Nanotechnol. 13, 544–548 (2018).
Song, T. et al. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. Science 360, 1214–1218 (2018).
Klein, D. R. et al. Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling. Science 360, 1218–1222 (2018).
Wang, Z. et al. Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3. Nat. Commun. 9, 2516 (2018).
Kim, H. H. et al. One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure. Nano Lett. 18, 4885–4890 (2018).
Britnell, L. et al. Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 947 (2012).
Britnell, L. et al. Resonant tunnelling and negative differential conductance in graphene transistors. Nat. Commun. 4, 1794 (2013).
Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820–823 (2009).
McCann, E. Asymmetry gap in the electronic band structure of bilayer graphene. Phys. Rev. B 74, 161403 (2006).
Esaki, L. New phenomenon in narrow germanium p–n junctions. Phys. Rev. 109, 603–604 (1958).
Stryjewski, E. & Giordano, N. Metamagnetism. Adv. Phys. 26, 487–650 (1977).
Jiang, P., Li, L., Liao, Z., Zhao, Y. X. & Zhong, Z. Spin direction-controlled electronic band structure in two-dimensional ferromagnetic CrI3. Nano Lett. 18, 3844–3849 (2018).
Chen, B. et al. All-oxide–based synthetic antiferromagnets exhibiting layer-resolved magnetization reversal. Science 357, 191 (2017).
Matsukura, F., Tokura, Y. & Ohno, H. Control of magnetism by electric fields. Nat. Nanotechnol. 10, 209–220 (2015).
Wang, L. et al. One-dimensional electrical contact to a two-dimensional material. Science 342, 614 (2013).
The research was supported by the National Science Foundation (NSF) under award DMR-1807810 for the sample and device fabrication, the Office of Naval Research (ONR) under award N00014-18-1-2368 for the device characterization, and the Air Force Office of Scientific Research (AFOSR) Hybrid Materials MURI under award FA9550-18-1-0480 for optical measurements. This work was also partially supported by the Cornell Center for Materials Research with funding from the NSF MRSEC programme (DMR-1719875) for low-temperature studies. It was performed in part at Cornell NanoScale Facility, an NNCI member supported by NSF grant NNCI-1542081.
The authors declare no competing interests.
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Jiang, S., Li, L., Wang, Z. et al. Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures. Nat Electron 2, 159–163 (2019). https://doi.org/10.1038/s41928-019-0232-3
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