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Spin torques join forces in a memory device

A combination of spin–orbit and spin-transfer torques could be used to create a versatile magnetic random access memory.

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Fig. 1: Mechanisms of writing in magnetic tunnel junctions using electrical currents for magnetic random access memories.


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Correspondence to Pedram Khalili Amiri.

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Khalili Amiri, P. Spin torques join forces in a memory device. Nat Electron 1, 576–577 (2018).

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