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How we made the IGZO transistor

Nature Electronicsvolume 1page428 (2018) | Download Citation

Thin-film transistors made from indium gallium zinc oxide (IGZO) are driving the next evolution in active-matrix flat panel displays. Hideo Hosono recounts how demand for a high-performance alternative to amorphous silicon transistors led to their development.

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  1. Tokyo Institute of Technology, Yokohama, Japan

    • Hideo Hosono

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Correspondence to Hideo Hosono.

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DOI

https://doi.org/10.1038/s41928-018-0106-0

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