Fig. 4: Direct comparison of transfer characteristics at room temperature (T = 300 K) and digital/analog figures of merit of TFET and MOSFET built on the very same flakes. | npj 2D Materials and Applications

Fig. 4: Direct comparison of transfer characteristics at room temperature (T = 300 K) and digital/analog figures of merit of TFET and MOSFET built on the very same flakes.

From: WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Fig. 4

a Transfer characteristics of the TFET and its built-in MOSFET at a drain bias of 500 mV. The WSe2/SnSe2 FET threshold voltage is shifted so to match the MOSFET one and favor a more direct comparison. The dotted line is the gate leakage current. Inset: subthreshold slopes of the two devices vs the output current in logarithmic scale. b Difference between TFET and MOSFET output current over the subthreshold region normalized with respect to the MOSFET current. c Corresponding percent gain of the WSe2/SnSe2 TFET over the WSe2 FET transconductances. d Direct comparison of the transconductance efficiencies of the WSe2/SnSe2 heterojunction and the WSe2 MOSFET. The TFET reaches peak transconductance efficiency close to 90 V−1 and outperforms the MOSFET over the entire subthreshold region.

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