a Three-dimensional schematic of the final device structure, consisting in a back gated WSe2/SnSe2 heterojunction FET with Pd Schottky contacts to both sides of the junction. b Band structure of WSe2 (blue) and SnSe2 (red) flakes obtained from DFT calculations. c Expected band alignment at the heterojunction; according to our DFT calculations, a 26 meV energy overlap is present between the edges of WSe2 valence band and SnSe2 conduction band. d Qualitative band diagram at the heterojunction based on reported material properties. The expected band alignment is of type III, broken-gap, and under positive drain bias applied to the WSe2 contact electrons are expected to tunnel from SnSe2 conduction band to WSe2 valence band.