Figure 4 | Scientific Reports

Figure 4

From: Reduced graphene oxide on silicon-based structure as novel broadband photodetector

Figure 4

(a) Switching characteristics of GO and rGO samples irradiated with 378 nm at bias voltage of 5 V. In the graph three cycles in which the laser light is switched on and off are shown. (b) The percentage of optical transmittance of glass substrate, GO thin film, bare rGO and rGO covered by PMMA are compared. All the thin films are deposited on a glass substrate; (inset) Tauc’s plot analysis used to estimate the bandgap of GO and rGO. The red lines represent the fitting analysis used to obtain the band gap values.

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