Figure 4 | Scientific Reports

Figure 4

From: SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices

Figure 4

(a) Applied example signals for Memory Write ‘1’ and Memory Write ‘0’. Read conditions are specified in brackets.[All pulse duration = 7 ms] (b) Experimental measurements for Memory Write ‘1’ operation (program device to state ‘11’) with device’s initial state as: (i) ‘10’, (ii) ‘01’, and (iii) ‘00’. Memory Write ‘0’ operation (program device to state ‘01’) with device’s initial state as (iv) ‘11’, (v) ‘10’ and (vi) ‘00’. Blue line: transient current through OxRAM device. Black line: P1/P2/P3 (applied signals). Black square: Initial resistance state, Red circle: Final resistance state post SLIM operation. Please note in (iv,v), the transient current through OxRAM device falls due to gradual increase in non-volatile resistance with application of successive reset pulses. Note: The current scale in (ivi) is varied for clear demonstration of gradual switching in the OxRAM device.

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