Schematics, scanning electron micrographs (SEM) of a captured and self-aligned chip (A) and energy-dispersive X-ray spectroscopy (EDX) of a Si-component detached from the Cu-receptor pad before and after transformation (B,C). (A1) and (A2) SEM of a single captured, self-assembled, and self-aligned chip before and after transformation of the melting point; the 400 µm × 400 µm pad on the dies aligns to the 400 µm × 400 µm copper receptor on the substrate. (B1) EDX investigation of the detached Si-chip; core and shell layers are separated via the Cu-intermediate layer. (B2) A uniform distribution of the three metal atoms Bi, In, and Sn, and the formation of the final high melting point solder join is to observe. The Cu-intermediate layer is no longer to observe. (C1) and (C2) SEM images of the detached chips.