Figure 2 | Scientific Reports

Figure 2

From: Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing

Figure 2

Capacitance characteristics of metal-Nb2O5−x-metal memdiodes. (a) The capacitance and conductance as a function of frequency. The capacitance is highly dependent on frequency with a relative dielectric constant greater than 180 at neurological frequencies (<100 Hz). (b) The capacitance and conductance as a function of DC bias voltage measured at 100 Hz. The capacitance is relatively unchanging below the turn-on voltage, increasing by only 6%. The slight increase in capacitance is likely due to image-force lowering decreasing the effective insulator thickness. Above the turn-on voltage the capacitance decreases and the conductance exhibits rectification.

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