Figure 5 | Scientific Reports

Figure 5

From: Multibit memory operation of metal-oxide bi-layer memristors

Figure 5

Bilayer device statistics. (a) Number of resistive states ranges for different bilayer combinations. AlxOy/TiO2 devices clearly outperform all other combinations with ZnOx/TiO2 and SiOx/TiO2 exhibiting the lower amount of resistive states; (b) Attainable states distribution for 32 AlxOy/TiO2 based devices. Nearly all the devices tested exhibit at least 4 bits of information whereas 1/3 of them surpasses the 6-bit mark.

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