Figure 4 | Scientific Reports

Figure 4

From: Multibit memory operation of metal-oxide bi-layer memristors

Figure 4

Programming the AlxOy/TiO2 device. Modes of selecting specific resistive states. Starting from a baseline resistance of ~27.5 kΩ a specific resistive state can be attained with different modes of programming, by modulating (i) the number of pulses, (ii) the duration of the pulses or (iii) the amplitude of the pulse. Using multiple pulses of lower amplitude and pulse width can help in pinpointing resistive states that otherwise could not have been discerned. In between the state selection the device is flushed with a series of 100 RESET pulses of 100 ns in duration.

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