Figure 3 | Scientific Reports

Figure 3

From: Multibit memory operation of metal-oxide bi-layer memristors

Figure 3

Multibit operation of a device using the AlxOy/TiO2 RRAM stack. (a) Cumulative probability distribution function plot of a device with a record of 92 distinct resistive states. All states are read at 0.5 V, are closely packed and individually discernible; (b) switching energy required to switch a typical AlxOy/TiO2 device. Only the energy expended during programming is regarded for this graph; (c) 8 hours retention measurements for select resistive states at room temperature. (d) 8 hours retention measurements for select resistive states at 85 °C. Resistance can be retained even at elevated temperatures.