Figure 2 | Scientific Reports

Figure 2

From: Multibit memory operation of metal-oxide bi-layer memristors

Figure 2

Multibit evaluation of devices based on different barrier layer combinations. Number of attainable resistive states (left axis) and ratio of the final state resistance over the baseline resistance (right axis) for typical bilayer devices. Confidence interval for the state assessment is 2σ following the routine described in Supplementary Figs S4 and S5. A chart containing each individual state assessed for every bilayer combination can be found in Supplementary Figs S6 and S7.