Table 2 Concentration of defects (in cm−3) from the SIMS, PAS, DLTS, and PL measurements.

From: Evaluation of the concentration of point defects in GaN

Method Defect Sample H3 Sample H202
SIMS C 4.6 × 1016 1.1 × 1016
H <6 × 1017 <4 × 1017
Cl 3.9 × 1016 3.7 × 1016
N D (D = SiGa and ON) 9.3 × 1016 1.2 × 1017
PAS VGa-related defects 6 × 1017 1 × 1017
DLTS29, 30 H1 (0.9 eV) 6.3 × 1012 5 × 1014
H3 (0.6 eV)   3 × 1014
H4 (0.7–0.85 eV) 8.5 × 1012  
H5 (1.1–1.2 eV)   5 × 1014
Total of hole traps 5 × 1013 1.5 × 1015
N D  − N A (2–8) × 1014 1 × 1017
PL RL1 (~1.2 eV) 2.4 × 1014 2 × 1015
YL1 (0.916 eV) 2.4 × 1014 8 × 1014
BL1 (0.40 eV) 1 × 1012 1 × 1013
UVL (0.223 eV) 7 × 1012 1 × 1014
PL Free electrons (n) at 300 K 3.6 × 1016 5.3 × 1016
Hall effect Free electrons (n) at 300 K 7.5 × 1016 7 × 1016