Table 1 Average concentration of impurities (in cm−3) from SIMS measurements in the region of 100–500 nm from the sample surface.

From: Evaluation of the concentration of point defects in GaN

Impurity\Sample H3 H202 Detection limit
C 4.6 × 1016 1.1 × 1016 2 × 1015
O 2.6 × 1016 3.2 × 1016 6 × 1015
Si 6.7 × 1016 8.9 × 1016 1 × 1016
H 6 × 1017 4 × 1017 (3–5) × 1017
Cl 3.9 × 1016 3.7 × 1016 1 × 1015