Figure 5 | Scientific Reports

Figure 5

From: Evaluation of the concentration of point defects in GaN

Figure 5

Temperature dependence of the GL1 band intensity. The lines are calculated using Eq. (5) with the following parameters: τ 0 = 35 μs, C pi  = 1.5 × 10−6 cm3/s, and E A  = 0.55 eV (dotted line); \({\tau }_{0}=35\times {(T/280{\rm{K}})}^{3}\) μs, C pi  = 3 × 10−8 cm3/s, and E A  = 0.45 eV (solid line); N v  = 3.2 × 1015 T 3/2 cm−3 and g = 2 (both lines). The (1−η 0) term in Eq. (5) is ignored due to low IQE.

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