Figure 2 | Scientific Reports

Figure 2

From: Evaluation of the concentration of point defects in GaN

Figure 2

Part of the PL spectrum from undoped GaN. Sample H3. T = 18 K, P exc  = 5 × 10−5 W/cm2. The long-dashed and short-dashed lines show shapes of the YL1 and RL1 bands, respectively, obtained using Eq. (1) with the following parameters: \({I}_{\max }^{PL}=0.98\times {10}^{8}\), S e  = 7.4, E 0 * = 2.67 eV, \(\hslash {\omega }_{{\rm{\max }}}=2.21\) eV (for the YL1 band) and \({I}_{{\rm{\max }}}^{PL}=1.88\times {10}^{8}\), S e  = 10, E 0 * = 2.33 eV, \(\hslash {\omega }_{{\rm{\max }}}=1.76\) eV (for the RL1 band). The × symbols show the sum of two simulated bands. ZPL is the zero-phonon line of the YL1 band at 2.575 eV.

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