(a) A schematics of the reference sample which has flat Si surface with AR coating (Sample A). The thickness of Si photo detector is 3 μm. The on-chip micro lens height is 1.7 μm from the Si surface to the top with the curvature radius of 0.85 μm. Each pixel equips on-chip color filter whose thickness of 0.5 μm. (b) A schematics of Sample B, which is same as Sample A, but with the IPA structure with the pitch of 400 nm, so that each pixel contains 3 × 3 IPA. (c) A schematics of Sample C which is same as Sample B except the DTI whose width of 200 nm and depth of 2000 nm.