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Nanoplasma-enabled picosecond switches for ultrafast electronics

A Publisher Correction to this article was published on 01 April 2020

This article has been updated


The broad applications of ultrawide-band signals and terahertz waves in quantum measurements1,2, imaging and sensing techniques3,4, advanced biological treatments5, and very-high-data-rate communications6 have drawn extensive attention to ultrafast electronics. In such applications, high-speed operation of electronic switches is challenging, especially when high-amplitude output signals are required7. For instance, although field-effect and bipolar junction devices have good controllability and robust performance, their relatively large output capacitance with respect to their ON-state current substantially limits their switching speed8. Here we demonstrate a novel on-chip, all-electronic device based on a nanoscale plasma (nanoplasma) that enables picosecond switching of electric signals with a wide range of power levels. The very high electric field in the small volume of the nanoplasma leads to ultrafast electron transfer, resulting in extremely short time responses. We achieved an ultrafast switching speed, higher than 10 volts per picosecond, which is about two orders of magnitude larger than that of field-effect transistors and more than ten times faster than that of conventional electronic switches. We measured extremely short rise times down to five picoseconds, which were limited by the employed measurement set-up. By integrating these devices with dipole antennas, high-power terahertz signals with a power–frequency trade-off of 600 milliwatts terahertz squared were emitted, much greater than that achieved by the state of the art in compact solid-state electronics. The ease of integration and the compactness of the nanoplasma switches could enable their implementation in several fields, such as imaging, sensing, communications and biomedical applications.

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Fig. 1: Switching speed limitation in solid-state electron devices.
Fig. 2: The concept of a nanoplasma switch.
Fig. 3: Implementation of nanoplasma switches.
Fig. 4: Impulse generation using a nanoplasma switch.
Fig. 5: Nanoplasma-based millimetre-wave/terahertz source.
Fig. 6: High-repetition-rate pulse sharpening with nanoplasma switches.

Data availability

All data needed to evaluate the conclusions in the paper are present in the paper or in the extended data figures.

Change history


  1. Benea-Chelmus, I.-C., Settembrini, F. F., Scalari, G. & Faist, J. Electric field correlation measurements on the electromagnetic vacuum state. Nature 568, 202–206 (2019).

    ADS  CAS  PubMed  Google Scholar 

  2. Kröll, J. et al. Phase-resolved measurements of stimulated emission in a laser. Nature 449, 698–701 (2007).

    ADS  PubMed  Google Scholar 

  3. Cocker, T. L., Peller, D., Yu, P., Repp, J. & Huber, R. Tracking the ultrafast motion of a single molecule by femtosecond orbital imaging. Nature 539, 263–267 (2016).

    ADS  PubMed  PubMed Central  Google Scholar 

  4. Jelic, V. et al. Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface. Nat. Phys. 13, 591–598 (2017).

    CAS  Google Scholar 

  5. Rossi, A. et al. Mechanisms and immunogenicity of nsPEF-induced cell death in B16F10 melanoma tumors. Sci. Rep. 9, 431 (2019).

    ADS  PubMed  PubMed Central  Google Scholar 

  6. Koenig, S. et al. Wireless sub-THz communication system with high data rate. Nat. Photon. 7, 977–981 (2013).

    ADS  CAS  Google Scholar 

  7. Sengupta, K., Nagatsuma, T. & Mittleman, D. Terahertz integrated electronic and hybrid electronic-photonic systems. Nat. Electron. 1, 622–635 (2018).

    Google Scholar 

  8. Baliga, B. J. Fundamentals of Power Semiconductor Devices (Springer Science & Business Media, 2010).

  9. del Alamo, J. A. Nanometre-scale electronics with III–V compound semiconductors. Nature 479, 317–323 (2011).

    ADS  PubMed  Google Scholar 

  10. Mei, X. et al. First demonstration of amplification at 1 THz using 25-nm InP high electron mobility transistor process. IEEE Electron Device Lett. 36, 327–329 (2015).

    ADS  CAS  Google Scholar 

  11. Johnson, E. O. Physical limitation on frequency and power parameters of transistors. In IEEE International Convention Record 27–34 (IEEE, 1965).

  12. Zheng, X. et al. N-polar GaN MISHEMTs on sapphire with a proposed figure of merit fmax·VDS,Q of 9.5 THz.V. In 75th Annual Device Research Conference 1–2 (IEEE, 2017).

  13. Lee, D. S. et al. 245 GHz InAlN/GaN HEMTs with oxygen plasma treatment. IEEE Electron Device Lett. 32, 755–757 (2011).

    ADS  CAS  Google Scholar 

  14. Young, K. K. Short-channel effect in fully depleted SOI MOSFETs. IEEE Trans. Electron Dev. 36, 399–402 (1989).

    ADS  Google Scholar 

  15. Vetury, R., Zhang, N. Q., Keller, S. & Mishra, U. K. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs. IEEE Trans. Electron Dev. 48, 560–566 (2001).

    ADS  CAS  Google Scholar 

  16. Mesyats, G. A. Pulsed Power (Kluwer, 2005).

  17. Loveless, A. M. & Garner, A. L. Scaling laws for gas breakdown for nanoscale to microscale gaps at atmospheric pressure. Appl. Phys. Lett. 108, 234103 (2016).

    ADS  Google Scholar 

  18. Walraven, J. A. et al. Electrostatic discharge/electrical overstress susceptibility in MEMS: a new failure mode. Proc. SPIE 4180, 30–39 (2000).

    ADS  CAS  Google Scholar 

  19. Moll, J. L. & Hamilton, S. A. Physical modeling of the step recovery diode for pulse and harmonic generation circuits. Proc. IEEE 57, 1250–1259 (1969).

    Google Scholar 

  20. Prager, H. J., Chang, K. K. N. & Weisbrod, S. High-power, high-efficiency silicon avalanche diodes at ultra-high frequencies. Proc. IEEE 55, 586–587 (1967).

    Google Scholar 

  21. Orlenko, O. A. UWB pulse generators. In International Conference on Ultrawideband and Ultrashort Impulse Signals 75–77 (IEEE, 2012).

  22. Nguyen C. & Han. J. Time-Domain Ultra-Wideband Radar, Sensor and Components: Theory, Analysis and Design 27–33 (Springer Science & Business Media, 2014).

  23. Zhang, X. et al. Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting. Nature 566, 368–372 (2019).

    ADS  PubMed  Google Scholar 

  24. Gao, Q. et al. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nat. Commun. 9, 4778 (2018).

    ADS  PubMed  PubMed Central  Google Scholar 

  25. Gurevich, V. Protecting Electrical Equipment: Good Practices for Preventing High Altitude Electromagnetic Pulse Impacts (Walter de Gruyter, 2019).

  26. Zhou, C. H. et al. Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices. IEEE Electron Device Lett. 33, 1132–1134 (2012).

    ADS  CAS  Google Scholar 

  27. Uhm, H. S., Jung, S. J. & Kim, H. S. Influence of gas temperature on electrical breakdown in cylindrical electrodes. J. Korean Phys. Soc. 42, 989–993 (2003).

    Google Scholar 

  28. Allen, K. R. & Phillips, K. Effect of humidity on the spark breakdown voltage. Nature 183, 174–175 (1959).

    ADS  CAS  Google Scholar 

  29. Tonouchi, M. Cutting-edge terahertz technology. Nat. Photon. 1, 97–105 (2007).

    ADS  CAS  Google Scholar 

  30. Rieh, J.-S., Yoon, D. & Yun, J. An overview of solid-state electronic sources and detectors for terahertz imaging. In 12th IEEE International Conference on Solid-State and Integrated Circuit Technology 1–4 (IEEE, 2014).

  31. Radisic, V. et al. Power amplification at 0.65 THz using InP HEMTs. IEEE Trans. Microw. Theory Tech. 60, 724–729 (2012).

    ADS  Google Scholar 

  32. Leong, K. M. K. H. et al. A 0.85 THz low noise amplifier using InP HEMT transistors. IEEE Microw. Wirel. Compon. Lett. 25, 397–399 (2015).

    Google Scholar 

  33. Choi, G. W., Choi, J. J. & Han, S. H. Note: Picosecond impulse generator driven by cascaded step recovery diode pulse shaping circuit. Rev. Sci. Instrum. 82, 016106 (2011).

    ADS  PubMed  Google Scholar 

  34. Lee, J. S. & Nguyen, C. Uniplanar picosecond pulse generator using step-recovery diode. Electron. Lett. 37, 504–506 (2001).

    ADS  Google Scholar 

  35. Mahfouz, M., Zhang, C., Merkl, B., Kuhn, M. & Fathy, A. Investigation of high accuracy indoor 3-D positioning using UWB technology. IEEE Trans. Microw. Theory Tech. 56, 1316–1330 (2008).

    ADS  Google Scholar 

  36. Han, J. & Nguyen, C. On the development of a compact sub-nanosecond tunable monocycle pulse transmitter for UWB application. IEEE Trans. Microw. Theory Tech. 54, 285–293 (2006).

    ADS  Google Scholar 

  37. De Angelis, A., Dionigi, M., Giglietti, R. & Carbone, P. Experimental comparison of low-cost sub-nanosecond pulse generators. IEEE Trans. Instrum. Meas. 60, 310–318 (2011).

    Google Scholar 

  38. Miao, M. & Nguyen, C. A uniplanar picosecond impulse genera-tor based on MESFET and SRD. Microw. Opt. Technol. Lett. 39, 470–472 (2003).

    Google Scholar 

  39. Zou, L., Gupta, S. & Caloz, C. A simple picosecond pulse generator based on a pair of step recovery diodes. IEEE Microw. Wirel. Compon. Lett. 27, 467–469 (2017).

    Google Scholar 

  40. Afshari, E. & Hajimiri, A. Nonlinear transmission lines for pulse shaping in silicon. IEEE J. Solid-State Circuits 40, 744–752 (2005).

    ADS  Google Scholar 

  41. Wu, X. & Sengupta, K. Dynamic waveform shaping with picosecond time widths. IEEE J. Solid-State Circuits 52, 389–405 (2017).

    ADS  Google Scholar 

  42. Chen, P., Assefzadeh, M. M. & Babakhani, A. A nonlinear Q-switching impedance technique for picosecond pulse radiation in silicon. IEEE Trans. Microw. Theory Tech. 64, 4685–4700 (2016).

    ADS  Google Scholar 

  43. Zhou, J. et al. A novel picosecond pulse generation circuit based on SRD and NLTL. PLoS One 11, e0149645 (2006).

    Google Scholar 

  44. Bobreshov, A. M., Zhabin, A. S., Stepkin, V. A. & Uskov, G. K. Novel tunable ultrashort pulse generator with high amplitude and low ringing level. IEEE Microw. Wirel. Compon. Lett. 27, 1013–1015 (2017).

    Google Scholar 

  45. Zhou, J., Yang, X., Lu, Q. & Liu, F. A novel low-ringing monocycle picosecond pulse generator based on step recovery diode. PLoS One 10, e0136287 (2015).

    PubMed  PubMed Central  Google Scholar 

  46. Ruengwaree, A., Ghose, A., Weide, J. & Kpmpa, G. Ultra-fast pulse transmitter for UWB microwave radar. In Proc. European Radar Conference 354–357 (IEEE, 2006).

  47. Gaspar, M. & Garvey, T. A. Compact 500 MHz 65 kW solid-state power amplifier for accelerator applications. IEEE Trans. Nucl. Sci. 63, 699–706 (2016).

    ADS  Google Scholar 

  48. Gaspar, M. et al. A compact 500 MHz 4 kW solid-state power amplifier for accelerator applications. Nucl. Instrum. Methods Phys. Res. A 637, 18–24 (2011).

    ADS  CAS  Google Scholar 

  49. Sen, B., Kayhan, M., Boran, H. & Bilgin, N. 1.25 kW S-band pulsed transmit/receive module for microwave tube amplifier replacement. In IEEE MTT-S International Microwave Symposium 1–4 (IEEE, 2011).

  50. Marchand, P., Ruan, T., Ribeiro, F. & Lopes, R. High power 352 MHz solid state amplifiers developed at the synchrotron SOLEIL. Phys. Rev. Spec. Top. Accel. Beams 10, 112001 (2007).

    ADS  Google Scholar 

  51. Kanto, K. et al. An X-band 250 W solid-state power amplifier using GaN power HEMTs. In IEEE Radio and Wireless Symposium Conference Digest 77–80 (IEEE, 2008).

  52. Micovic, M. et al. W-band GaN MMIC with 842 mW output power at 88 GHz. In IEEE MTT-S International Microwave Symposium 237–240 (IEEE, 2010).

  53. Micovic, M. et al. W-band GaN MMIC amplifiers. Presented at the 2010 IEEE Lester Eastman Conference High Performance Devices, Troy, New York, 2010 (2010).

  54. Micovic, M. et al. GaN MMIC PAs for E-band (71–95 GHZ) radio. In IEEE CSIC Symposium Digest 1–4 (IEEE, 2008).

  55. Masuda, S. et al. GaN MMIC amplifiers for W-band transceivers. In European Microwave Integrated Circuits Conference 443–447 (IEEE, 2009).

  56. Wang, H. et al. Power-amplifier modules covering 70–113 GHz using MMICs. IEEE Trans. Microw. Theory Tech. 49, 9–16 (2001).

    ADS  Google Scholar 

  57. Morgan, M. et al. Wideband medium power amplifiers using a short gate-length GaAs MMIC process. In IEEE MTT-S International Microwave Symposium 541–544 (IEEE, 2009).

  58. Kallfass, I. et al. 200 GHz monolithic integrated power amplifier in metamorphic HEMT technology. IEEE Microw. Wirel. Compon. Lett. 19, 410–412 (2009).

    Google Scholar 

  59. Tessmann, A., Leuther, A., Schwoerer, C. & Massler, H. Metamorphic 94 GHz power amplifier MMICs. In IEEE MTT-S International Microwave Symposium 1579–1582 (IEEE, 2005).

  60. Herrick, K. J. et al. W-band metamorphic HEMT with 267 mW output power. In IEEE MTT-S International Microwave Symposium 843–846 (IEEE, 2005).

  61. Ingram, D. L. et al. A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier. In IEEE Radio Frequency Integrated Circuits Symposium 95–98 (IEEE, 1999).

  62. Samoska, L., Peralta, A., Hu, M., Micovic, M. & Schmitz, A. A 20 mW, 150 GHz InP HEMT MMIC power amplifier module. IEEE Microw. Wirel. Compon. Lett. 14, 56–58 (2004).

    Google Scholar 

  63. Samoska, L. et al. Medium power amplifiers covering 90–130 GHz for the ALMA telescope local oscillators. In IEEE MTT-S International Microwave Symposium 1583–1586 (IEEE, 2005).

  64. Samoska, L. & Leong, Y. C. 65–145 GHz InP MMIC HEMT medium power amplifiers. In IEEE MTT-S International Microwave Symposium 1805–1808 (IEEE, 2001).

  65. Deal, W. R. et al. Development of sub-millimeter-wave power amplifier. IEEE Trans. Microw. Theory Tech. 55, 2719–2726 (2007).

    ADS  Google Scholar 

  66. Radisic, V. et al. A 50 mW 220 GHz power amplifier module. In IEEE MTT-S International Microwave Symposium 45–48 (IEEE, 2010).

  67. Deal, W. R. et al. A balanced submillimeter wave power amplifier. In IEEE MTT-S International Microwave Symposium 399–402 (IEEE, 2008).

  68. Radisic, V. et al. A 10 mW submillimeter wave solid state power amplifier module. IEEE Trans. Microw. Theory Tech. 58, 1903–1909 (2010).

    ADS  Google Scholar 

  69. Huang, P. P., Lai, R., Grundbacher, R. & Gorospe, B. A. 20 mW G-band monolithic driver amplifier using 0.07 m InP HEMT. In IEEE MTT-S International Microwave Symposium 806–809 (IEEE, 2006).

  70. Hacker, J. et al. 250 nm InP DHBT monolithic amplifiers with 4.8 dB gain at 324 GHz. In IEEE MTT-S International Microwave Symposium 403–406 (IEEE, 2008).

  71. Reed, T. B. et al. 35 mW multi-cell InP HBT amplifiers with on-wafer power combing for 220 GHz applications. In Proc. IEEE Compound Semiconductor Integrated Circuit Symposium 1–4 (IEEE, 2011).

  72. Griffith, Z., Urteaga, M., Rowell, P. & Pierson, R. A. 6-10 mW power amplifier at 290-307.5GHz in 250 nm InP HBT. IEEE Microw. Wirel. Compon. Lett. 25, 597–599 (2015).

    Google Scholar 

  73. Chen, Y. et al. A 220-GHz InP DHBT power amplifier with integrated planar spatial power combiner. IEEE Microw. Wirel. Compon. Lett. 29, 225–227 (2019).

    Google Scholar 

  74. Wollitzer, M., Buechler, J., Schaffler, F. & Luy, J. F. D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz. Electron. Lett. 32, 122–123 (1996).

    ADS  Google Scholar 

  75. Ishibashi, T. & Ohmori, M. 200-GHz 50-mW CW oscillation with silicon SDR IMPATT. IEEE Trans. Microw. Theory Tech. 24, 858–859 (1976).

    ADS  Google Scholar 

  76. Chang, K., Thrower, W. F. & Hayashibara, G. M. Millimeter-wave silicon IMPATT sources and combiners for the 110-260-GHz range. IEEE Trans. Microw. Theory Tech. 29, 1278–1284 (1981).

    ADS  Google Scholar 

  77. Ino, M., Ishibashi, T. & Ohmori, M. CW oscillation with p+–p–n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands. Electron. Lett. 12, 148–149 (1976).

    ADS  Google Scholar 

  78. Lee, T. P., Standley, R. D. & Misawa, T. A. 50-GHz silicon IMPATT diode oscillator and amplifier. IEEE Trans. Electron Dev. 15, 741–747 (1968).

    ADS  Google Scholar 

  79. Eisele, H. Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks. Solid-State Electron. 32, 253–257 (1989).

    ADS  CAS  Google Scholar 

  80. Eisele, H. & Freyer, J. Single-drift flat-profile GaAs IMPATT diodes at 90 GHz. Electron. Lett. 22, 224–225 (1986).

    ADS  Google Scholar 

  81. Weller, K. P., Ying, R. S. & Lee, D. H. Millimeter IMPATT sources for the 130–170-GHz range. IEEE Trans. Microw. Theory Tech. 24, 738–743 (1976).

    ADS  Google Scholar 

  82. Bayraktaroglu, B. & Shih, H. D. Millimeter-wave GaAs distributed IMPATT diodes. IEEE Electron Device Lett. 4, 393–395 (1983).

    ADS  Google Scholar 

  83. Tschernitz, M. & Freyer, J. 140 GHz GaAs double-read IMPATT diodes. Electron. Lett. 31, 582–583 (1995).

    ADS  CAS  Google Scholar 

  84. Adlerstein, M. G. & Chu, S. L. G. GaAs IMPATT diodes for 60 GHz. IEEE Electron Device Lett. 5, 97–98 (1984).

    ADS  Google Scholar 

  85. Eisele, H. 355 GHz oscillator with GaAs TUNNETT diode. Electron. Lett. 41, 329–331 (2005).

    ADS  CAS  Google Scholar 

  86. Eisele, H. 480 GHz oscillator with an InP Gunn device. Electron. Lett. 46, 422–423 (2010).

    ADS  CAS  Google Scholar 

  87. Eisele, H. InP Gunn devices for 400–425 GHz. Electron. Lett. 42, 358–359 (2006).

    ADS  Google Scholar 

  88. Eisele, H. Dual Gunn device oscillator with 10 mW at 280 GHz. Electron. Lett. 43, 636–638 (2007).

    ADS  Google Scholar 

  89. Eisele, H. Third-harmonic power extraction from InP Gunn devices up to 455 GHz. IEEE Microw. Wirel. Compon. Lett. 19, 416–418 (2009).

    Google Scholar 

  90. Eisele, H. & Kamoua, R. High-performance oscillators and power combiners with InP Gunn devices at 260-330 GHz. IEEE Microw. Wirel. Compon. Lett. 16, 284–286 (2006).

    Google Scholar 

  91. Power amplifiers. Analog Devices (2019).

  92. Signal generator extension modules. Virginia Diodes (2019).

  93. IMPATT terahertz sources. Terasense (2019).

  94. Jin, H. K. et al. High power efficiency, 8 V~20 V input range DC-DC buck converter with phase-locked loop. In Proc. 9th International Conference on Power Electronics and ECCE Asia 1772–1777 (IEEE, 2015).

  95. Lee, W., Han, D., Morris, C. & Sarlioglu, B. Minimizing switching losses in high switching frequency GaN-based synchronous buck converter with zero-voltage resonant-transition switching. In Proc. 9th International Conference on Power Electronics and ECCE Asia 233–239 (IEEE, 2015).

  96. Hayashi, Y. Power density design of SiC and GaN DC-DC converters for 380 V DC distribution system based on series-parallel circuit topology. In Proc. 28th Annual IEEE Applied Power Electronics Conference and Exposition 1601–1606 (IEEE, 2013).

  97. Tkachov, S. & Agostinelli, M. A mixed-signal ripple-based controller for a 16 V, 10 MHz integrated buck converter. In Proc. IEEE Applied Power Electronics Conference and Exposition 350–354 (IEEE, 2016).

  98. Song, M. K., Chen, L., Sankman, J., Terry, S. & Ma, D. 16.7 A 20 V 8.4 W 20 MHz four-phase GaN DC-DC converter with fully on-chip dual-SR bootstrapped GaN FET driver achieving 4ns constant propagation delay and 1ns switching rise time. In Proc. IEEE International Solid-State Circuits Conference 302–303 (IEEE, 2015).

  99. Kim, W., Brooks, D. & Wei, G.-Y. A fully-integrated 3-level DC– DC converter for nanosecond-scale DVFS. IEEE J. Solid-State Circuits 47, 206–219 (2012).

    ADS  Google Scholar 

  100. Wibben, J. & Harjani, R. A high-efficiency DC-DC converter using 2 nH integrated inductors. IEEE J. Solid-State Circuits 43, 844–854 (2008).

    ADS  Google Scholar 

  101. Aklimi, E., Piedra, D., Tien, K., Palacios, T. & Shepard, K. L. Hybrid CMOS/GaN 40-MHz maximum 20-V input DC–DC multiphase buck converter. IEEE J. Solid-State Circuits 52, 1618–1627 (2017).

    ADS  Google Scholar 

  102. Gaye, M., Ajram, S., Lebas, J. Y., Kozlowski, R. & Salmer, G. A. 50–100 MHz 5 V to 5 V, 1 W Cuk converter using gallium arsenide power switches. In Proc. IEEE International Symposium on Circuits and Systems 264–267 (IEEE, 2000).

  103. Glaser, J. S. & Rivas, J. M. A. 500 W push–pull dc–dc power converter with a 30 MHz switching frequency. Proc. IEEE Applied Power Electronics Conference and Exposition 654–661 (IEEE, 2010).

  104. Rivas, J. M. Radio Frequency dc–dc Power Conversion., PhD dissertation Massachusetts Institute of Technology (2006).

  105. Redl, R., Molnar, B. & Sokal, N. Class E resonant regulated dc–dc power converters: analysis of operations and experimental results at 1.5 MHz. IEEE Trans. Power Electron. PE-1, 111–120 (1986).

    ADS  Google Scholar 

  106. Katayama, Y., Sugahara, S., Nakazawa, H. & Edo, M. High-powerdensity MHz-switching monolithic DC-DC converter with thin-film inductor. In Proc. IEEE Power Electronics Specialists Conference Vol, 3 1485–1490 (IEEE, 2000).

  107. Schrom, G. et al. A 480-MHz, multiphase interleaved buck dc–dc converter with hysteretic control. In Proc. IEEE 35th Annu. Power Electronics Specialists Conference Vol. 6, 4702–4707 (IEEE, 2004).

  108. Dusmez, S., Khaligh, A. & Hasanzadeh, A. A zero-voltage-transition bidirectional dc/dc converter. IEEE Trans. Ind. Electron. 62, 3152–3162 (2015).

    Google Scholar 

  109. Hazucha, P. et al. A 233 MHz 80%–87% efficient four-phase DC-DC converter utilizing air-core inductors on package. IEEE J. Solid-State Circuits 40, 838–845 (2005).

    ADS  Google Scholar 

  110. Choi, J., Tsukiyama, D., Tsuruda, Y. & Rivas, J. 13.56 MHz 1.3 kW resonant converter with GaN FET for wireless power transfer. In Proc. IEEE Wireless Power Transfer Conference (WPTC) 1–4 (IEEE, 2015).

  111. Bathily, M., Allard, B. & Hasbani, F. A. 200-MHz integrated buck converter with resonant gate drivers for an RF power amplifier. IEEE Trans. Power Electron. 27, 610–613 (2012).

    ADS  Google Scholar 

  112. Onizuka, K., Inagaki, K., Kawaguchi, H., Takamiya, M. & Sakurai, T. Stacked-chip implementation of on-chip buck converter for distributed power supply system in SiPs. IEEE J. Solid-State Circuits 42, 2404–2410 (2007).

    ADS  Google Scholar 

  113. Pinon, V., Hasbani, F., Giry, A., Pache, D. & Gamier, C. A single-chip WCDMA envelope reconstruction LDMOS PA with 130MHz switched-mode power supply. In Proc. IEEE International Solid-State Circuits Conference 564–636 (IEEE, 2008).

  114. Sun, J. et al. Fully monolithic cellular Buck converter design for 3-D power delivery. IEEE Trans. Very Large Scale Integr. VLSI Syst. 17, 447–451 (2009).

    Google Scholar 

  115. Bergveld, H. J. et al. A 65-nm-CMOS 100-MHz 87%-efficient DC–DC down converter based on dual-die system-in-package integration. In Proc. IEEE Energy Conversion Congress and Exposition 3698–3705 (IEEE, 2009).

  116. Chen, W. et al. A 25.6 W 13.56 MHz wireless power transfer system with a 94% efficiency GaN class-E power amplifier. In IEEE MTT-S International Microwave Symposium 1–3 (IEEE, 2012).

  117. Liu, M., Fu, M. & Ma, C. Parameter design for a 6.78 MHz wireless power transfer system based on analytical derivation of Class E currentdriven rectifier. IEEE Trans. Power Electron. 31, 4280–4291 (2016).

    ADS  Google Scholar 

  118. You, F., He, S., Tang, X. & Cao, T. Performance study of a class-E power amplifier with tuned series-parallel resonance network. IEEE Trans. Microw. Theory Tech. 56, 2190–2200 (2008).

    ADS  Google Scholar 

  119. Mertens, K. L. R. & Steyaert, M. S. J. A. 700-MHz 1-W fully differential CMOS class-E power amplifier. IEEE J. Solid-State Circuits 37, 137–141 (2002).

    ADS  Google Scholar 

  120. Wong, S. L., Bhimnathwala, H., Luo, S., Halali, B. & Navid, S. A. 1 W 830 MHz monolithic BICMOS power amplifier. In Proc. IEEE International Solid-State Circuits Conference 52–54 (IEEE, 1996).

  121. Lin, S. & Fathy, A. E. A. 20 W GaN HEMT VHF/UHF class-D power amplifier. In Proc. WAMICON 1–4 (IEEE, 2011).

  122. Ho, P. S. & Kwok, T. Electromigration in metals. Rep. Prog. Phys. 52, 301–348 (1989).

    ADS  CAS  Google Scholar 

  123. Shingubara, S., Nakasaki, Y. & Kaneko, H. Electromigration in a single crystalline submicron width aluminum interconnection. Appl. Phys. Lett. 58, 42–44 (1991).

    ADS  CAS  Google Scholar 

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We thank Keysight for providing the UXR1102A ultrahigh frequency oscilloscope. We thank F. Qaderi and A. Ionescu for helping on measurements with a 110-GHz VNA. We are grateful to the help of the staff at the Center of Micro and Nano Technology (CMi) at EPFL with the fabrication process. We thank A. Skrivervik for discussions. This work was partially supported by the Swiss Office of Energy under the grant SI/501887-01 (MEPCO) and by the Swiss National Science Foundation (SNSF) under the grant 200021_169362.

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Authors and Affiliations



M.S.N. and E.M. conceived the project. M.S.N. designed the experiments and analysed the data. E.M. supervised the project. M.S.N., M.Z. and G.S. fabricated the devices. A.J. and N.P. designed and implemented circuits to evaluate the fabricated devices. M.S.N., A.J. and N.P. performed the experiments. M.S.N. and E.M. wrote the manuscript with input from all authors.

Corresponding author

Correspondence to Elison Matioli.

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The authors declare no competing interests.

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Extended data figures and tables

Extended Data Fig. 1 Benchmark of state-of-the-art power amplifiers.

a, Power versus frequency trade-off in power amplifiers reveals a decay of output power as frequency increases, resulting in a constant Pf 2. It should be noted that the limit of 2.5 mW THz2 in equation (2) has been obtained for a single transistor. With power combination techniques in power amplifiers, relatively higher powers (still below about 10 mW THz2) can be obtained. In the terahertz band, however, such a power combination becomes very challenging, especially if a high bandwidth is required. As an example of state-of-the-art performance in monolithic microwave integrated circuits (MMICs) and terahertz monolithicly integrated circuits (TMICs), Radisic et al.31 achieved 1.7 mW at 650 GHz in a single power amplifier corresponding to Pf 2 = 0.7 mW THz2. Another work presented by Leong et al.32 reported 0.93 mW at 0.85 THz showing Pf 2 = 0.67 mW THz2. RF, radiofrequency. b, Power versus frequency trade-off in different solid-state-based millimetre-wave/terahertz sources showing the generality of the decrease in power at high frequencies. For the references for the data points, please refer to Methods.

Extended Data Fig. 2 De-embedding cabling and probing effects from time-domain measurements.

a, b, Measured reflection and transmission scattering parameters for the used high-frequency coaxial cable (a) and ground–signal–ground (GSG) radiofrequency probe, reported by the manufacturer (b). c, d, FFT of the measured signal (blue) and the obtained FFT after de-embedding (red) for 20-nm-wide-gap (c) and 50-nm-wide-gap (d) devices. e, f, The measured (blue) and de-embedded (red) waveforms for 20-nm-wide-gap (e) and 50-nm-wide-gap (f) devices showing a 5-ps rise time corresponding to the 70-GHz bandwidth of the oscilloscope.

Extended Data Fig. 3 Parasitic capacitance characterization of nanoplasma devices.

a, Schematic of the experimental set-up for capacitance measurement, using a two-port (P1 and P2) VNA. b, Optical image of a device under test in series configuration with two ports of the parametric network analyser. Ground pads are shown with GND. c, Measured (solid lines) and modelled (discrete points) reflection (S11 = S22) and transmission (S21 = S12) coefficients through a 100-nm-gap nanoplasma device. The device was simply modelled as a 25-fF capacitance. d, Extracted capacitance versus frequency for devices with g = 70, 200, 1,000 and 5,000 nm. e, Extracted capacitance versus gap distance. The small parasitic capacitances lead to very high dv/dt limit for nanoplasma devices, for example, 42 V ps−1 for 500-nm-gap devices. The capacitance can be further decreased by shrinking the device width.

Extended Data Fig. 4 Statistics of the switching performance.

ac, One-hundred measured switching transients for 1,000-nm-gap devices with 100-nm-thick gold (a), 100-nm-thick tungsten (b) and 500-nm-thick tungsten (c). d–f, Measured switching voltage at t = 20 ps (with standard deviation \({\sigma }_{{\rm{a}}}\)) and measured noise level at t = −20 ps (with standard deviation \({\sigma }_{{\rm{b}}}\)) corresponding to the waveforms shown in ac, respectively. The normalized effective standard deviation \({\sigma }_{{\rm{eff}}}=\sqrt{{\sigma }_{{\rm{a}}}^{2}-{\sigma }_{{\rm{b}}}^{2}}/{V}_{{\rm{SW}}}\), where VSW ≈ 120 V is the switching voltage, is 4.9%, 4.6% and 3.2% for the measured waveforms shown in ac, respectively. g–i, Measured maximum dv/dt corresponding to the measured waveforms shown in ac, respectively. Characterization of dv/dt is more subject to measurement errors because of the limited sampling time (5 ps per sample). It should be noted that the limited sampling time generally leads to an underestimation of dv/dt, as the sampling does not necessarily pick the maximum of dv/dt. All the results are presented without de-embedding.

Extended Data Fig. 5 Lifetime evaluation under harsh switching condition.

a, Dissipated power inside a 700-nm-gap nanoplasma switch with tungsten pads under a short circuit test resulting in the highest possible current density for lifetime measurements (high current density is the main driver for electromigration). Measurements showed energy and peak power dissipation of 3 μJ and 0.4 kW at each short circuit pulse. Such a high power and energy dissipation are orders of magnitude higher than in practical applications. b, Degradation with the definition of (VTH[n] – VTH[0])/VTH[0], where VTH[n] is the threshold voltage at nth short circuit. The error bars show ±2σ, where σ is the standard deviation from ten measurements. The obtained results for the proposed devices with sputtered tungsten pads show their capability of withstanding repetitive short circuits, without any specific optimization. The devices with a thicker pads (thus lower current density) provide a more stable performance even under very harsh conditions, thus one could expect a very long lifetime in normal operations. In addition, electromigration has a solid background in silicon electronics with several demonstrated solutions, including the use of specific alloys, or single crystalline metals that result in nearly infinite lifetime even for submicrometre interconnections123. Thus, even though the 100-nm-thick devices showed a larger degradation in such extreme conditions, they could also be useful in practical applications.

Extended Data Fig. 6 Millimetre-wave/terahertz experimental set-ups and antenna characterization.

a, Experimental set-up for characterizing millimetre-wave and terahertz radiation from the proposed devices integrated with bowtie antennas. A low-speed input pulse charges the bowtie antenna, as a capacitance, until the voltage difference between two terminals reaches the threshold voltage. At this time, the nanoplasma switch turns ON in a very short time and excites the fundamental frequency of the bowtie antenna, as a resonator. The radiated wave is received by another bowtie antenna in front of the transmitter antenna. The receiver antenna is loaded by the 50-Ω port of a UXR1102A Infiniium UXR-Series Keysight oscilloscope with 113-GHz bandwidth. b, Experimental set-up for characterizing the 110-GHz antennas. c, Measured scattering parameters for the antennas. d, Illustration of the obtained results in power/frequency sheet29, as well as the equivalent constant Pf 2 line. After de-embedding the effect of cables and radiofrequency probe, as well as S21 of the antenna, we obtained average peak power of 50 W at 109 GHz. This is considerably higher than typical power levels achieved with other technologies, including impact ionization avalanche transit-time diode (IMPATT), resonant tunnelling diode (RTD) and Gunn diode.

Extended Data Fig. 7 High-repetition-rate performance.

a, Proposed circuit to demonstrate very-high-repetition-rate switching. The FET is ON for t < t0, charging the inductor L. At t = t0, the transistors turns OFF initiating a resonance between its output capacitance and inductor L. b, Without connecting the DUT, a high-amplitude spike is generated. By connecting the DUT, when the voltage reaches the VTH of the switch, the DUT discharges the output capacitance. At this time, the inductor still has current, so it charges again the output capacitance. This charging/discharging process can continue up to several times, depending on the inductor current. c, Measured voltage waveform over DUT (g = 6 μm) showing a small plasma recombination time <20 ns to reconfigure the transistor back to its operation. This shows a high-switching frequency in the devices. The measured less than 20-ns recombination time enables the achievement of a switching frequency up to 50 MHz (depends on the duty cycle) at 390 V (hollow red marker). In the current circuit, however, the switching frequency was limited to 20 MHz (solid red star). d, Benchmarking the obtained switching frequency with the state of the art in solid-state electronics. These results show the potential of the proposed devices, not only in ultrafast dv/dt transients, but also in switching frequencies. For the references for the data points, please refer to Methods.

Extended Data Fig. 8 Application in over-voltage protection of devices and systems.

Radiofrequency ports of high-frequency systems need to have a unit to protect the system from over-voltage caused by electromagnetic interference (EMI), high-power radiofrequency radiation and so on25. The protection unit needs to be easily integrable, provide a fast action, a high-current capability, as well as a low parasitic capacitance. The proposed devices are well matched to this application, as they can discharge the over-voltage and retain their off state in a short time. They can also be used to protect any electron device from over voltage causing hard breakdown and device failure. The voltage protection limit can be easily adjusted by the gap size. a, Breakdown test on a 60-V-rated GaN-on-Si High-electron-mobility transistor (HEMT) (device A) resulting in a hard breakdown voltage (VBR) of 140 V. b, Breakdown test on a 200-V-rated GaN HEMT (device B) resulting in VBR = 470 V. c, Breakdown test on a 650-V-rated GaN HEMT (device C) resulting in VBR = 1,340 V. As there are no avalanche characteristics in GaN HEMTs26, the manufacturers have to over design the devices to ensure a safe operation. This leads to a much higher ON resistance, which considerably increases the amount of losses in power converters. By integrating the proposed devices inside the package, it is possible to protect the device from over-voltages to eliminate the over design, which eventually leads to lower ON resistance. d, Proposed circuit to demonstrate the protection application for a FET from a hard breakdown. The FET is in the OFF state holding voltage VDD, and an over-voltage vtr is applied. When the voltage over device is lower than the protection limit (VTH), the plasma device is OFF, resulting in ultralow parasitics (Extended Data Fig. 3). As a result, the protection branch current (iP) is completely negligible with respect to the FET current (iFET); therefore, the protection branch does not affect the normal operation of the device. However, when the drain-source voltage becomes larger than VTH, the plasma device discharges the extra energy, protecting the device from hard breakdown. The series resistance RS = 1 kΩ is used for smoothing the discharge process. The load resistance (RL) was considered to be 1 kΩ. To demonstrate the functionality of this method, we used GaN HEMT B biased at VDD = 220 V and a plasma device with VTH = 380 V. e, Output voltage without protection branch, showing a hard breakdown at 460 V. f, Output voltage with protection branch. The plasma device discharges the over-voltage, limiting the output voltage to 385 V. The protection limit (VTH) can be easily adjusted by tuning the gap distance.

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Samizadeh Nikoo, M., Jafari, A., Perera, N. et al. Nanoplasma-enabled picosecond switches for ultrafast electronics. Nature 579, 534–539 (2020).

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