Extended Data Fig. 10: Calculation of carrier mobility in the Hall bar devices and the robust QHE in the ultra-flat graphene films. | Nature

Extended Data Fig. 10: Calculation of carrier mobility in the Hall bar devices and the robust QHE in the ultra-flat graphene films.

From: Proton-assisted growth of ultra-flat graphene films

Extended Data Fig. 10

a, Typical transport characteristics of graphene FET with device linewidth of 100 μm measured at 300 K and 1.5 K (left panel); carrier mobilities extracted by field effect μFE ≈ 4,900 cm2 V−1 s−1 and ~4,700 cm2 V−1 s−1 for electrons and holes at 300 K, and ~5,600 cm2 V−1 s−1 and ~5,300 cm2 V−1 s−1 for electrons and holes at 1.5 K (centre panel); and carrier mobilities extracted by Hall effect when applying magnetic field from 0 to 7.5 T at 300 K, showing μHall is ~9,800 cm2 V−1 s−1 at 300 K with n ≈ 2.9 × 1011 cm−2 (right panel). b, Magnetotransport properties of Hall device with linewidth of 20 μm. c, Magnetotransport properties of Hall device with linewidth of 100 μm, showing that the first σxy plateaus appear at 2e2/h for both electrons and holes at RT under 7.5 T. d, Magnetotransport properties of Hall device with linewidth of 500 μm, showing that QHE still appears. Insets are optical images of the Hall devices. The device with linewidth 500 μm was fabricated by simple manual operation. Scale bars in bd are 20 μm, 100 μm and 500 μm, respectively.

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