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2D materials for electronics

Ferroelectrics meet transition metal dichalcogenides

Nature Reviews Materials volume 8, page 644 (2023)Cite this article

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Combining ferroelectric materials with heterostructures of 2D materials can enable devices that work both as reconfigurable logic switches and as neuromorphic devices. However, the integration of these materials on a single platform is not trivial. Adrian Ionescu and collaborators succeeded in integrating a ferroelectric gate, silicon-doped hafnium oxide, with a heterostructure of two 2D transition metal dichalcogenides, WSe2 and SnSe2. The device, which is reconfigurable and can operate in both a ferroelectric and a non-ferroelectric gate mode, can work in four different modalities, which could be exploited for different applications, including in neuromorphic devices. Devices of this type could lead to the fabrication of hybrid CMOS-like building blocks for high-performance computing, both for classical and for neuromorphic devices.

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  1. Nature Reviews Materials http://www.nature.com/natrevmats/

    Giulia Pacchioni

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  1. Giulia Pacchioni
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Correspondence to Giulia Pacchioni.

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Pacchioni, G. Ferroelectrics meet transition metal dichalcogenides. Nat Rev Mater 8, 644 (2023). https://doi.org/10.1038/s41578-023-00602-9

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