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Electrochemical ion insertion from the atomic to the device scale

Nature Reviews Materials volume 6, pages 847–867 (2021)Cite this article

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Abstract

Electrochemical ion insertion involves coupled ion–electron transfer reactions, transport of guest species and redox of the host. The hosts are typically anisotropic solids with 2D conduction planes but can also be materials with 1D or isotropic transport pathways. These insertion compounds have traditionally been studied in the context of energy storage but also find extensive applications in electrocatalysis, optoelectronics and computing. Recent developments in operando, ultrafast and high-resolution characterization methods, as well as accurate theoretical simulation methods, have led to a renaissance in the understanding of ion-insertion compounds. In this Review, we present a unified framework for understanding insertion compounds across timescales and length scales ranging from atomic to device levels. Using graphite, transition metal dichalcogenides, layered oxides, oxyhydroxides and olivines as examples, we explore commonalities in these materials in terms of point defects, interfacial reactions and phase transformations. We illustrate similarities in the operating principles of various ion-insertion devices, ranging from batteries and electrocatalysts to electrochromics and thermal transistors, with the goal of unifying research across disciplinary boundaries.

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Fig. 1: Electrochemical ion insertion plays a key role in a wide variety of applications.
Fig. 2: Ion insertion effects on electrocatalytic electrodes and reactions.
Fig. 3: The role of point defects in the host.
Fig. 4: The microscopic picture of insertion.
Fig. 5: Phase separation in insertion materials across length scales, ranging from the atomic scale to the device scale.
Fig. 6: Ultrafast time-domain probes of ion transport.

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Acknowledgements

This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering (contract DE-AC02-76SF00515), as well as by the Toyota Research Institute through D3BATT: Center for Data-Driven Design of Li-Ion Batteries. P.M.C. acknowledges support through the Stanford Graduate Fellowship as a Winston and Fu-Mei Chen Fellow and through the National Science Foundation Graduate Research Fellowship under grant no. DGE-1656518. We thank Y. Li (University of Michigan), A. Salleo, Y. Cui, H. Thaman, A. Baclig and A. Liang (Stanford University), and M. Aykol (Toyota Research Institute) for discussions.

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Author notes

  1. These authors contributed equally: Aditya Sood, Andrey D. Poletayev, Daniel A. Cogswell, Peter M. Csernica, J. Tyler Mefford

Authors and Affiliations

  1. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA

    Aditya Sood, Andrey D. Poletayev, J. Tyler Mefford, Aaron M. Lindenberg & William C. Chueh

  2. Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA

    Aditya Sood, Andrey D. Poletayev, Peter M. Csernica, J. Tyler Mefford, Aaron M. Lindenberg & William C. Chueh

  3. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA

    Daniel A. Cogswell, Dimitrios Fraggedakis & Martin Z. Bazant

  4. Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, USA

    Michael F. Toney

  5. Department of Chemical and Biological Engineering, University of Colorado Boulder, Boulder, CO, USA

    Michael F. Toney

  6. PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, USA

    Aaron M. Lindenberg

  7. Department of Mathematics, Massachusetts Institute of Technology, Cambridge, MA, USA

    Martin Z. Bazant

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Contributions

All authors contributed to the discussion of content and editing of the manuscript prior to submission. A.S., A.D.P., D.A.C., P.M.C., J.T.M. and D.F. researched literature for the article. Specifically, A.S. led the drafting of the manuscript and contributed to the dynamic switching sections, A.D.P. contributed to the ultrafast section with input from A.M.L., D.A.C. contributed to the interfaces and phase transformations sections with input from D.F., P.M.C. contributed to the point defects section, J.T.M. contributed to the electrocatalysis section, D.F. contributed to the coupled ion–electron transfer section and M.Z.B. contributed to the desalination section. A.S., A.D.P., D.A.C., P.M.C. and J.T.M. contributed equally and are listed alphabetically.

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Correspondence to Michael F. Toney, Aaron M. Lindenberg, Martin Z. Bazant or William C. Chueh.

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Sood, A., Poletayev, A.D., Cogswell, D.A. et al. Electrochemical ion insertion from the atomic to the device scale. Nat Rev Mater 6, 847–867 (2021). https://doi.org/10.1038/s41578-021-00314-y

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