With the ever-growing demand for a greater number of pixels, next-generation displays have challenging requirements for resolution as well as colour gamut. Here, to meet this need, quantum-dot light-emitting diodes (QLEDs) with an ultrahigh pixel resolution of 9,072–25,400 pixels per inch are realized via transfer printing combined with the Langmuir–Blodgett film technology. To reduce the leakage current of the devices, a honeycomb-patterned layer of wide-bandgap quantum dots is embedded between the light-emitting quantum-dot pixels as a non-emitting charge barrier layer. Red and green QLEDs are demonstrated. Notably, the red devices achieve a brightness of up to 262,400 cd m−2 at an applied voltage of 8 V and a peak external quantum efficiency of 14.72%. This work provides a promising way for achieving ultrahigh-resolution QLED devices with high performance.
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The data that support the findings of this study are available from the corresponding authors upon reasonable request.
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This work was supported by the National Natural Science Foundation of China (62075043) and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (2021ZZ126).
The authors declare no competing interests.
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Nature Photonics thanks Zhaojun Liu, Manuel Alejandro Triana Valencia and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.
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Meng, T., Zheng, Y., Zhao, D. et al. Ultrahigh-resolution quantum-dot light-emitting diodes. Nat. Photon. 16, 297–303 (2022). https://doi.org/10.1038/s41566-022-00960-w