Fast, sensitive avalanche photodiodes (APDs) are required for applications such as high-speed data communications and light detection and ranging (LIDAR) systems. Unfortunately, the InP and InAlAs used as the gain material in these APDs have similar electron and hole impact ionization coefficients (α and β, respectively) at high electric fields, giving rise to relatively high excess noise and limiting their sensitivity and gain bandwidth product1. Here, we report extremely low excess noise in an AlAs0.56Sb0.44 lattice matched to InP. A deduced β/α ratio as low as 0.005 with an avalanche region of 1,550 nm is close to the theoretical minimum and is significantly smaller than that of silicon, with modelling suggesting that vertically illuminated APDs with a sensitivity of −25.7 dBm at a bit error rate of 1 × 10−12 at 25 Gb s−1 and 1,550 nm can be realized. These findings could yield a new breed of high-performance receivers for applications in networking and sensing.
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The data that support the plots within this paper and other findings of this study are available from the corresponding authors upon reasonable request.
Emmons, R. B. Avalanche photodiodes frequency response. J. Appl. Phys. 38, 3705 (1967).
Campbell, J. C. et al. Recent advances in avalanche photodiodes. IEEE J. Sel. Top. Quantum Electron. 10, 777–787 (2004).
Nada, M., Muramoto, Y., Yokoyama, H., Ishibashi, T. & Kodama, S. InAlAs APD with high multiplied responsivity-bandwidth product (MR-bandwidth product) of 168 A/W GHz for 25 Gbit/s high-speed operations. Electron. Lett. 48, 397–399 (2012).
Nada, M., Yoshimatsu, T., Muramoto, Y., Yokoyama, H. & Matsuzaki, H. Design and performance of high-speed avalanche photodiodes for 100-Gb/s systems and beyond. J. Lightwave Technol. 33, 984–990 (2015).
Yoshimatsu, T. et al. Compact and high-sensitivity 100-Gb/s (4 × 25 Gb/s) APD-ROSA with a LAN-WDM PLC demultiplexer. Opt. Express 20, B393–B398 (2012).
Shimizu, S., Shiba, K., Nakata, T., Kasahara, K. & Makita, K. 40 Gbit/s waveguide avalanche photodiode with p-type absorption layer and thin InAlAs multiplication layer. Electron. Lett. 43, 476–477 (2007).
Nada, M. et al. 50-Gbit/s vertical illumination avalanche photodiode for 400-Gbit/s ethernet systems. Opt. Express 22, 14681–14687 (2014).
Kang, Y. et al. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product. Nat. Photon. 3, 59–63 (2009).
Michel, J., Liu, J. & Kimerling, C. High-performance Ge-on-Si photometers. Nat. Photon. 4, 527–534 (2010).
Huang, Z. et al. 25 Gbps low-voltage waveguide Si–Ge avalanche photodiode. Optica 8, 793–798 (2016).
Farrell, A. C. et al. Plasmonic field confinement for separate absorption–multiplication in InGaAs nanopillar avalanche photodiodes. Sci. Rep. 5, 17580 (2015).
Bank, S. R. et al. Avalanche photodiodes based on the AlInAsSb materials system. IEEE J. Sel. Top. Quantum Electron. 24, 3800407 (2018).
Woodson, M. E. et al. Low noise AlInAsSb avalanche photodiode. Appl. Phys. Lett. 108, 081102 (2016).
Rockwell, A. et al. Al0.8In0.2As0.23Sb0.77 avalanche photodiodes. IEEE Photon. Technol. Lett. 30, 1048–1051 (2018).
Marshall, A. R. J., Ker, P. J., Krysa, A., David, J. P. R. & Tan, C. H. High speed InAs electron avalanche photodiodes overcome the conventional gain–bandwidth product limit. Opt. Express 23, 23341–23349 (2011).
Yi, X. et al. Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Sci. Rep. 8, 9107 (2018).
Xie, J., Xie, S., Tozer, T. C. & Tan, C. H. Excess noise characteristics of thin AlAsSb APDs. IEEE Trans. Electron Devices 59, 1475–1479 (2012).
McIntyre, R. J. Multiplication noise in uniform avalanche diodes. IEEE Trans. Electron Devices 13, 164–168 (1966).
Li, K. F. et al. Avalanche multiplication noise characteristics in thin GaAs p+-i-n+ diodes. IEEE Trans. Electron Devices 45, 2102–2107 (1998).
Hayat, M. M. et al. Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes. IEEE Trans. Electron Devices 39, 546–552 (1992).
Goh, Y. L. et al. Excess avalanche noise in In0.52Al0.48As. IEEE J. Quantum Electron. 43, 503–507 (2007).
Produce Datasheet: Si APD (S10341 series) https://www.hamamatsu.com/resources/pdf/ssd/s10341_series_kapd1030e.pdf (Hamamatsu).
Ong, D. S. G. et al. A simple model to determine multiplication and noise in avalanche photodiodes. J. Appl. Phys. 83, 3426 (1998).
Ramo, S. Currents induced by electron motion. Proc. IRE 27, 584–585 (1939).
Xie, S. et al. InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product. Opt. Express 24, 24242–24247 (2016).
Rouvie., A. et al. High gain × bandwidth product over 140 GHz planar junction AlInAs avalanche photodiodes. IEEE Photon. Technol. Lett. 20, 455–457 (2008).
Li, N. et al. InGaAs/InAlAs avalanche photodiode with undepleted absorber. Appl. Phys. Lett. 82, 2175–2177 (2003).
Hayashi, M. et al. Microlens-integrated large-area InAlGaAs–InAlAs superlattice APDs for eye-safety 1.5 μm wavelength optical measurement use. IEEE Photon. Technol. Lett. 10, 576–578 (1998).
Agrawal, G. P. in Fiber-Optic Communication Systems 3rd edn, Ch. 4 (Wiley, 2002).
Ong, D. S. G. et al. Optimisation of InP APDs for high-speed lightwave systems. J. Lightwave Technol. 27, 3294–3302 (2009).
Ishimura, E. & Yagyu, E. High sensitivity 2.5/10 Gbps InAlAs avalanche photodiodes. Mitsubishi Electr. Adv. 127, 17–29 (2009).
Tan, C. H., Xie, S. & Xie, J. Low noise avalanche photodiodes incorporating a 40 nm AlAsSb avalanche region. IEEE J. Quantum Electron. 48, 36–41 (2012).
D.L.H. acknowledges financial support provided by the Sêr Cymru National Research Network in Advanced Engineering and Materials. S.Y.X. acknowledges financial support from the European Regional Development Fund through the Welsh Government. B.L.L. acknowledges support from the National Science Foundation of the United States (ECCS-1810507).
The authors declare no competing interests.
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Yi, X., Xie, S., Liang, B. et al. Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nat. Photonics 13, 683–686 (2019). https://doi.org/10.1038/s41566-019-0477-4
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