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Visible quantum dot light-emitting diodes with simultaneous high brightness and efficiency


Quantum dot light-emitting diodes are promising light sources for applications in displays. However, to date, there have been no reports of devices that simultaneously offer both high brightness and high external quantum efficiency. Here, we report red, green and blue quantum dot light-emitting diodes based on CdSe/ZnSe core/shell structures that have these attributes. We demonstrate devices with maximum external quantum efficiencies of 21.6%, 22.9% and 8.05% for red, green and blue colours with corresponding brightness of 13,300 cd m–2, 52,500 cd m–2 and 10,100 cd m–2. The devices also offer peak luminance of 356,000 cd m–2, 614,000 cd m–2 and 62,600 cd m2, respectively. We postulate that this high performance is due to the use of Se throughout the core/shell regions and the existence of alloyed bridging layers at the core/shell interfaces. This study suggests that in the future visible quantum dot light-emitting diodes will also be suitable for lighting applications.

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Fig. 1: Schematic of the device architecture and electroluminescence performance of the red, green and blue QLEDs.
Fig. 2: Lifetime measurements of the QLED devices for the three primary colours.
Fig. 3: Characterization of the morphology and composition of the QDs for the green QLEDs.
Fig. 4: Equivalent circuit model of the QLEDs and comparison between the simulated and experimental results.

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Data availability

The data that support the plots within this paper and other findings of this study are available from the corresponding authors upon reasonable request.


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We gratefully acknowledge the financial support from the National Natural Science Foundation of China (grant numbers 61474037, 61874039, 11634011, 61434002, 11722435, 11504357, 11404314 and 21671058), Key Project of National Natural Science Foundation of China (grant number U1604261), National Key Basic Research Programme of China (grant number 2017YFA0303500), and the Natural Science Foundation of Anhui Province (1708085MA06).

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Authors and Affiliations



H.B.S. and Z.Y.Z. conceived the central ideas and concepts. H.B.S., Y.B.Z. and Q.L.L. synthesized the materials, fabricated the devices and collected the performance data of the QLEDs. Q.G., X.L. and Z.Y.Z. developed the equivalent circuit model. H.B.S. and Z.H.L. characterized the non-blinking aspects. Y.L. performed the HAADF-STEM characterizations. L.C. and S.J.W. obtained the SEM data. H.B.S., Q.G. and Z.Y.Z. wrote the manuscript. Z.Y.Z., Z.L.D. and L.S.L. directed the project. All authors discussed the results and assisted in the data interpretation and manuscript preparation.

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Correspondence to Zuliang Du, Lin Song Li or Zhenyu Zhang.

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Supplementary Information

Detailed analysis of the emission properties of the LEDs.

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Shen, H., Gao, Q., Zhang, Y. et al. Visible quantum dot light-emitting diodes with simultaneous high brightness and efficiency. Nature Photon 13, 192–197 (2019).

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