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Semiconductor moiré materials

Nature Nanotechnology volume 17, pages 686–695 (2022)Cite this article

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Abstract

Moiré materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moiré materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane–Mele–Hubbard physics and equilibrium moiré excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moiré materials.

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Fig. 1: TMD semiconductor moiré materials.
Fig. 2: Hubbard model physics.
Fig. 3: Experimental moiré Hubbard and Kane–Mele–Hubbard phase diagrams.
Fig. 4: Kane–Mele–Hubbard physics.
Fig. 5: Excitons in a moiré lattice.

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Acknowledgements

We thank C.-M. Jian for discussions on the electronic structure of twisted bilayer graphene and TMD moiré materials. We acknowledge support from the US Office of Naval Research under award number N00014-21-1-2471 (K.F.M.) and the National Science Foundation (NSF) under DMR- 2114535 (J.S.).

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Authors and Affiliations

  1. Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA

    Kin Fai Mak & Jie Shan

  2. School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA

    Kin Fai Mak & Jie Shan

  3. Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA

    Kin Fai Mak & Jie Shan

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  1. Kin Fai Mak
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  2. Jie Shan
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Correspondence to Kin Fai Mak or Jie Shan.

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Mak, K.F., Shan, J. Semiconductor moiré materials. Nat. Nanotechnol. 17, 686–695 (2022). https://doi.org/10.1038/s41565-022-01165-6

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