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Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Abstract

Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays. The MoS2 transistors exhibit median mobility of 54 cm2 V−1s −1, 210 μA μm−1 drive current and excellent uniformity. The TFTs can drive micrometre-sized LEDs to 7.1 × 107 cd m2 luminance under low voltage. Comprehensive analysis on driving capability, response time, power consumption and modulation scheme indicates that MoS2 TFTs are suitable for a range of display applications up to the high resolution and brightness limit. We further demonstrate prototypical 32 × 32 active-matrix displays at 1,270 pixels-per-inch resolution. Moreover, our process is fully monolithic, low-temperature, scalable and compatible with microelectronic processing.

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Fig. 1: Monolithic integration of MoS2 TFTs with micro-LEDs.
Fig. 2: MoS2 transistor performance.
Fig. 3: Driving individual micro-LEDs by MoS2 TFTs.
Fig. 4: High-resolution AM micro-LED displays.

Data availability

The data that support the plots within this paper and other finding of this study are available from the corresponding author on reasonable request.

Code availability

All code used in this work is available from the corresponding author on reasonable request.

References

  1. Nakamura, S., Senoh, M. & Mukai, T. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes. Appl. Phys. Lett. 62, 2390–2392 (1993).

    CAS  Google Scholar 

  2. Li, G. et al. GaN-based light-emitting diodes on various substrates: a critical review. Rep. Prog. Phys. 79, 056501 (2016).

    Google Scholar 

  3. Global Packaged GaN LED Market Report (Market Reports World, 2019); https://www.marketreportsworld.com/-global-packaged-gan-led-market-14194592

  4. Jin, S. X., Li, J., Li, J. Z., Lin, J. Y. & Jiang, H. X. GaN microdisk light emitting diodes. Appl. Phys. Lett. 76, 631–633 (2000).

    CAS  Google Scholar 

  5. Yuan, Y. F. et al. Potential key technologies for 6G mobile communications. Sci. China Inf. Sci. 63, 183301 (2020).

    Google Scholar 

  6. Lin, J. Y. & Jiang, H. X. Development of microLED. Appl. Phys. Lett. 116, 100502 (2020).

    CAS  Google Scholar 

  7. Wong, M. S., Nakamura, S. & DenBaars, S. P. Review—progress in high performance III-nitride micro-light-emitting diodes. ECS J. Solid State Sci. Technol. 9, 015012 (2019).

    Google Scholar 

  8. Huang, Y., Hsiang, E.-L., Deng, M.-Y. & Wu, S.-T. Mini-LED, micro-LED and OLED displays: present status and future perspectives. Light Sci. Appl. 9, 105 (2020).

    CAS  Google Scholar 

  9. Liu, Z., Chong, W. C., Wong, K. M. & Lau, K. M. GaN-based LED micro-displays for wearable applications. Microelectron. Eng. 148, 98–103 (2015).

    CAS  Google Scholar 

  10. Park, S.-I. et al. Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays. Science 325, 977–981 (2009).

    CAS  Google Scholar 

  11. Liu, Z. J., Chong, W. C., Wong, K. M. & Lau, K. M. 360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (LEDoS) micro-displays. J. Disp. Technol. 9, 678–682 (2013).

    CAS  Google Scholar 

  12. Cok, R. S. et al. Inorganic light-emitting diode displays using micro-transfer printing. J. Soc. Inf. Disp. 25, 589–609 (2017).

    CAS  Google Scholar 

  13. Zhang, L., Ou, F., Chong, W. C., Chen, Y. & Li, Q. Wafer-scale monolithic hybrid integration of Si-based IC and III–V epi-layers—a mass manufacturable approach for active matrix micro-LED micro-displays. J. Soc. Inf. Disp. 26, 137–145 (2018).

    CAS  Google Scholar 

  14. Tull, B. R. et al. 26.2: Invited paper: high brightness, emissive microdisplay by integration of III‐V LEDs with thin film silicon transistors. SID Symp. Dig. Tech. Pap. 46, 375–377 (2015).

    CAS  Google Scholar 

  15. Akinwande, D. et al. Graphene and two-dimensional materials for silicon technology. Nature 573, 507–518 (2019).

    CAS  Google Scholar 

  16. Liu, C. et al. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15, 545–557 (2020).

    CAS  Google Scholar 

  17. Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V. & Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2, 17033 (2017).

    CAS  Google Scholar 

  18. Fiori, G. et al. Electronics based on two-dimensional materials. Nat. Nanotechnol. 9, 768–779 (2014).

    CAS  Google Scholar 

  19. Yu, Z. et al. Realization of room-temperature phonon-limited carrier transport in monolayer MoS2 by dielectric and carrier screening. Adv. Mater. 28, 547–552 (2016).

    CAS  Google Scholar 

  20. Li, W. et al. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices. Nat. Electron. 2, 563–571 (2019).

    CAS  Google Scholar 

  21. Zhou, J. et al. A library of atomically thin metal chalcogenides. Nature 556, 355–359 (2018).

    CAS  Google Scholar 

  22. Wang, Q. et al. Wafer-scale highly oriented monolayer MoS2 with large domain sizes. Nano Lett. 20, 7193–7199 (2020).

    CAS  Google Scholar 

  23. Kang, Kibum et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656–660 (2015).

    CAS  Google Scholar 

  24. Tang, H. W. et al. Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides. Sci. China Inf. Sci. 62, 220401 (2019).

    Google Scholar 

  25. Goossens, S. et al. Broadband image sensor array based on graphene–CMOS integration. Nat. Photonics 11, 366–371 (2017).

    CAS  Google Scholar 

  26. Choi, M. et al. Full-color active-matrix organic light-emitting diode display on human skin based on a large-area MoS2 backplane. Sci. Adv. 6, eabb5898 (2020).

    CAS  Google Scholar 

  27. Liu, Y., Huang, Y. & Duan, X. Van der Waals integration before and beyond two-dimensional materials. Nature 567, 323–333 (2019).

    CAS  Google Scholar 

  28. Yu, J. et al. Van der Waals epitaxy of III‐nitride semiconductors based on 2D materials for flexible applications. Adv. Mater. 32, 1903407 (2020).

    CAS  Google Scholar 

  29. Akinwande, D., Petrone, N. & Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678 (2014).

    CAS  Google Scholar 

  30. Zhuang, Z. et al. High color rendering index hybrid III-nitride/nanocrystals white light-emitting diodes. Adv. Funct. Mater. 26, 36–43 (2016).

    CAS  Google Scholar 

  31. Li, T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. https://doi.org/10.1038/s41565-021-00963-8 (2021).

  32. Pirkle, A. et al. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2. Appl. Phys. Lett. 99, 122108 (2011).

    Google Scholar 

  33. Liu, Y. et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature 557, 696–700 (2016).

    Google Scholar 

  34. Huang, Y. et al. Universal mechanical exfoliation of large-area 2D crystals. Nat. Commun. 11, 2453 (2020).

    CAS  Google Scholar 

  35. Struthers, J. D. Solubility and diffusivity of gold, iron, and copper in silicon. J. Appl. Phys. 27, 1560 (1956).

    CAS  Google Scholar 

  36. Day, Jacob et al. III-Nitride full-scale high-resolution microdisplays. Appl. Phys. Lett. 99, 031116 (2011).

    Google Scholar 

  37. Smets, Q. et al. Sources of variability in scaled MoS2 FETs. In Proc. 2020 IEEE International Electron Devices Meeting (IEDM) 3.1.1–3.1.4 (IEEE, 2020).

  38. Smithe, K. K. H., Suryavanshi, S. V., Muñoz Rojo, M., Tedjarati, A. D. & Pop, E. Low variability in synthetic monolayer MoS2 devices. ACS Nano 11, 8456–8463 (2017).

    CAS  Google Scholar 

  39. Huo, N. et al. High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression. Nanoscale 10, 15071–15077 (2018).

    CAS  Google Scholar 

  40. Yu, L. et al. Design, modeling, and fabrication of chemical vapor deposition grown MoS2 circuits with E-mode FETs for large-area electronics. Nano Lett. 16, 6349–6356 (2016).

    CAS  Google Scholar 

  41. Polyushkin, D. et al. Analogue two-dimensional semiconductor electronics. Nat. Electron. 3, 486–491 (2020).

    CAS  Google Scholar 

  42. Sebastian, A. et al. Benchmarking monolayer MoS2 and WS2 field-effect transistors. Nat. Commun. 12, 693 (2021).

    CAS  Google Scholar 

  43. Nomura, K. et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488–492 (2004).

    CAS  Google Scholar 

  44. Wager, J. F. TFT technology: advancements and opportunities for improvement. Info Disp. 36, 9–13 (2020).

    Google Scholar 

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Acknowledgements

This work is supported by the Leading-edge Technology Programme of Jiangsu Natural Science Foundation (grant no. BK20202005); the National Natural Science Foundation of China (grant nos. 61927808, 61521001, 61734003, 61861166001, 61851401, 51861145202, 62004104, 61974062, 61921005, 91964202); the Strategic Priority Research Programme of Chinese Academy of Sciences (grant no. XDB30000000); the National Key Research and Development Programme of China (grant no. 2016YFB0404101); the Natural Science Foundation of Jiangsu Province (grant no. BK20202005); the Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Research Funds from NJU-Yangzhou Institute of Opto-electronics and the Fundamental Research Funds for the Central Universities, China.

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Authors and Affiliations

Authors

Contributions

X.W. conceived the research and supervised the project with B.L., R.Z. and Y.S. W.M, F.X., Z.Y., T.T. developed the MoS2 TFT fabrication and monolithic integration process, fabricated micro-LED structures, conducted electrical measurements and demonstrated AM displays. L.S., W.L., H.N. and N.D. contributed to MoS2 TFT fabrication. L.L. and T.L. performed MoS2 CVD growth and characterizations. F.X., K.W. and J.W. performed LED brightness measurements. L.H. and L.S. performed TEM and data analysis. F.Q., X.T. and D.P. contributed to micro-LED fabrication. S.H. designed peripheral circuits and programs. D.L, Y.Z and Y.L. contributed to data analysis. W.M., Z.Y., B.L. and X.W. co-wrote the manuscript with input from other authors. All authors contributed to discussions.

Corresponding authors

Correspondence to Bin Liu, Rong Zhang, Yi Shi or Xinran Wang.

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Peer review information Nature Nanotechnology thanks Deji Akinwande and Deep Jariwala for their contribution to the peer review of this work.

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Supplementary information

Supplementary Information

Supplementary Text 1, Figs. 1–14 and Tables 1 and 2.

Supplementary Video 1

Scanning the QR code by smart phone to get the word ‘MoS2 LED NJU’.

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Meng, W., Xu, F., Yu, Z. et al. Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix. Nat. Nanotechnol. 16, 1231–1236 (2021). https://doi.org/10.1038/s41565-021-00966-5

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