The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mainstream technology; however, their performance has been hampered by low extinction ratio and slow operational speed. Despite substantial efforts to improve these characteristics, typical write times of hundreds of micro- or milliseconds remain a few orders of magnitude longer than that of their volatile counterparts. Here we demonstrate non-volatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, achieving ultrahigh-speed programming/erasing operations in the range of nanoseconds with extinction ratio up to 1010. This enhanced performance enables new device capabilities such as multi-bit storage, thus opening up applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale up.
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We thank Y.-Y. Zhang, S. Du, G. Qian and Z. Zhu for helpful discussions, and H. Yang, J. Li, C. Gu and Q. Huan for assistance in device fabrication and measurement. This work was supported by the National Key Research & Development Projects of China (grant nos. 2016YFA0202300 and 2018FYA0305800), National Natural Science Foundation of China (grant no. 61888102), Strategic Priority Research Program of Chinese Academy of Sciences (CAS; grant nos. XDB30000000 and XDB28000000), Youth Innovation Promotion Association of CAS (Y201902) and Beijing Outstanding Young Scientist Program (BJJWZYJH01201914430039). M.O. acknowledges support from ONR (N000141712885) and NSF (DMR1608720). S.J.P. acknowledges support from the Ministry of Education, Singapore, under a Tier 2 grant (no. MOE2017-T2-2-139). A portion of the research was performed in the CAS Key Laboratory of Vacuum Physics.
The authors declare no competing interests.
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Wu, L., Wang, A., Shi, J. et al. Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. Nat. Nanotechnol. 16, 882–887 (2021). https://doi.org/10.1038/s41565-021-00904-5
Nature Nanotechnology (2021)