Abstract
Semiconducting nanomaterials synthesized using wet chemical techniques play an important role in emerging optoelectronic and photonic technologies. Controlling the surface chemistry of the nano building blocks and their interfaces with ligands is one of the outstanding challenges for the rational design of these systems. We present an integrated theoretical and experimental approach to characterize, at the atomistic level, buried interfaces in solids of InAs nanoparticles capped with Sn2S64– ligands. These prototypical nanocomposites are known for their promising transport properties and unusual negative photoconductivity. We found that inorganic ligands dissociate on InAs to form a surface passivation layer. A nanocomposite with unique electronic and transport properties is formed, that exhibits type II heterojunctions favourable for exciton dissociation. We identified how the matrix density, sulfur content and specific defects may be designed to attain desirable electronic and transport properties, and we explain the origin of the measured negative photoconductivity of the nanocrystalline solids.
This is a preview of subscription content, access via your institution
Relevant articles
Open Access articles citing this article.
-
Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots
Nature Communications Open Access 26 May 2023
Access options
Access Nature and 54 other Nature Portfolio journals
Get Nature+, our best-value online-access subscription
$29.99 / 30 days
cancel any time
Subscribe to this journal
Receive 12 print issues and online access
$259.00 per year
only $21.58 per issue
Rent or buy this article
Prices vary by article type
from$1.95
to$39.95
Prices may be subject to local taxes which are calculated during checkout







References
Park, J., Joo, J., Kwon, S., Jang, Y. & Hyeon, T. Synthesis of monodisperse spherical nanocrystals. Angew. Chem. Int. Ed. 46, 4630–4660 (2007).
Yin, Y. & Alivisatos, A. P. Colloidal nanocrystal synthesis and the organic-inorganic interface. Nature 437, 664–670 (2005).
Murray, C. B., Kagan, C. R. & Bawendi, M. G. Synthesis and characterization of monodisperse nanocrystals and close-packed nanocrystal assemblies. Annu. Rev. Mater. Sci. 30, 545–610 (2000).
Peng, X. et al. Shape control of CdSe nanocrystals. Nature 404, 59–61 (2000).
Parak, W. J. Complex Colloidal Assembly. Science 334, 1359–1360 (2011).
Talapin, D. V. Nanocrystal solids: A modular approach to materials design. MRS Bull. 37, 63–71 (2012).
Kovalenko, M. V. Chemical design of nanocrystal solids. CHIMIA 67, 316–321 (2013).
Wippermann, S., He, Y., Vörös, M. & Galli, G. Novel silicon phases and nanostructures for solar energy conversion. Appl. Phys. Rev. 3, 040807 (2016).
Wippermann, S. et al. Solar nanocomposites with complementary charge extraction pathways for electrons and holes: Si embedded in ZnS. Phys. Rev. Lett. 112, 106801 (2014).
Wippermann, S. et al. High-pressure core structures of Si nanoparticles for solar energy conversion. Phys. Rev. Lett. 110, 046804 (2013).
Vörös, M. et al. Germanium nanoparticles with non-diamond core structures for solar energy conversion. J. Mater. Chem. A 2, 9820–9827 (2014).
Kovalenko, M. V. et al. Prospects of nanoscience with nanocrystals. ACS Nano 9, 1012–1057 (2015).
Boles, M. A. & Talapin, D. V. Connecting the dots. Science 344, 1340–1341 (2014).
Leatherdale, C. A. et al. Photoconductivity in CdSe quantum dot solids. Phys. Rev. B 62, 2669 (2000).
Kovalenko, M. V., Bodnarchuk, M. I., Zaumseil, J., Lee, J.-S. & Talapin, D. V. Expanding the chemical versatility of colloidal nanocrystals capped with molecular metal chalcogenide ligands. J. Am. Chem. Soc. 132, 10085–10092 (2010).
Liu, W., Lee, J.-S. & Talapin, D. V. III–V nanocrystals capped with molecular metal chalcogenide ligands: High electron mobility and ambipolar photoresponse. J. Am. Chem. Soc. 135, 1349–1357 (2013).
Lee, J.-S., Kovalenko, M. V., Huang, J., Chung, D. S. & Talapin, D. V. Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays. Nat. Nanotech. 6, 348–352 (2011).
Ip, A. H. et al. Hybrid passivated colloidal quantum dot solids. Nat. Nanotech. 7, 577–582 (2012).
Ning, Z. et al. All-inorganic colloidal quantum dot photovoltaics employing solution-phase halide passivation. Adv. Mater. 24, 6295–6299 (2012).
Kagan, C., Lifshitz, E., Sargent, E. & Talapin, D. V. Building devices from colloidal quantum dots. Science 353, aac5523 (2016).
Fan, F. et al. Continuous-wave lasing in colloidal quantum dot solids enabled by facet-selective epitaxy. Nature 544, 75–79 (2017).
Chung, D. S. et al. Low voltage, hysteresis free, and high mobility transistors from all-inorganic colloidal nanocrystals. Nano Lett. 12, 1813–1820 (2012).
Huang, J. et al. Surface functionalization of semiconductor and oxide nanocrystals with small inorganic oxoanions (PO4 3−, MoO4 2−) and polyoxometalate ligands. ACS Nano 8, 9388–9402 (2014).
Cordones, A. A., Scheele, M., Alivisatos, A. P. & Leone, S. R. Probing the interaction of single nanocrystals with inorganic capping ligands: Time-resolved fluorescence from CdSe–CdS quantum dots capped with chalcogenidometalates. J. Am. Chem. Soc. 134, 18366–18373 (2012).
Llordes, A., Garcia, G., Gazques, J. & Milliron, D. Tunable near-infrared and visible-light transmittance in nanocrystal-in-glass composites. Nature 500, 323–326 (2013).
Yakunin, S. et al. High infrared photoconductivity in films of arsenic-sulfide-encapsulated lead-sulfide nanocrystals. ACS Nano 8, 12883–12894 (2014).
Ekimov, A. Growth and optical properties of semiconductor nanocrystals in a glass matrix. J. Lumin. 70, 1–20 (1996).
Protesescu, L. et al. Atomistic description of thiostannate-capped CdSe nanocrystals: Retention of four-coordinate SnS4 motif and preservation of Cd-rich stoichiometry. J. Am. Chem. Soc. 137, 1862–1874 (2015).
Fan, J.-F., Oigawa, H. & Nannichi, Y. The effect of (NH4)2S treatment on the interface characteristics of GaAs MIS structures. Jpn J. Appl. Phys. 27, L1331–L1333 (1988).
Lebedev, M. V., Mayer, T. & Jaegermann, W. Sulfur adsorption at GaAs(1 0 0) from solution: role of the solvent in surface chemistry. Surf. Sci. 547, 171–183 (2003).
Bessolov, V. & Lebedev, M. Chalcogenide passivation of III–V semiconductor surfaces. Semiconductors 32, 1141–1156 (1998).
Petrovykh, D., Yang, M. & Whitman, L. Chemical and electronic properties of sulfur-passivated InAs surfaces. Surf. Sci. 523, 231–240 (2003).
L’vova, T. et al. Sulfide passivation of InAs(100) substrates in Na2S solutions. Phys. Solid State 51, 1114–1120 (2009).
Petrovykh, D. Y., Sullivan, J. M. & Whitman, L. J. Quantification of discrete oxide and sulfur layers on sulfur-passivated InAs by XPS. Surf. Interface Anal. 37, 989–997 (2005).
Suyatin, D. B., Thelander, C., Björk, M. T., Maximov, I. & Samuelson, L. Sulfur passivation for ohmic contact formation to InAs nanowires. Nanotechnology 18, 105307 (2007).
Chasse, T., Chasse, A., Peisert, H. & Streubel, P. Sulfur-modified surface of InP(001): Evidence for sulfur incorporation and surface oxidation. Appl. Phys. A 65, 543–549 (1997).
Gallet, D. & Hollinger, G. Chemical, structural, and electronic properties of sulfur-passivated InP(001) (2x1) surfaces treated with (NH4)2Sx. Appl. Phys. Lett. 62, 982–984 (1993).
Srivastava, V., Janke, E. M., Diroll, B. T., Schaller, R. D. & Talapin, D. V. Facile, economic and size-tunable synthesis of metal arsenide nanocrystals. Chem. Mater. 28, 6797–6802 (2016).
Rao, C. R., Sundaram, S., Schmidt, R. & Comas, J. Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering. J. Appl. Phys. 54, 1808–1815 (1983).
Bedel, E. et al. Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry. J. Appl. Phys. 60, 1980–1984 (1986).
Skone, J. H., Govoni, M. & Galli, G. Self-consistent hybrid functional for condensed systems. Phys. Rev. B 89, 195112 (2014).
Perdew, J., Ernzerhof, M. & Burke, K. J. Rationale for mixing exact exchange with density functional approximations. Chem. Phys. 105, 9982–9985 (1996).
Galland, C. et al. Two types of luminescence blinking revealed by spectroelectrochemistry of single quantum dots. Nature 479, 203–207 (2011).
Yang, Y. et al. Hot carrier trapping induced negative photoconductance in InAs nanowires toward novel nonvolatile memory. Nano Lett. 15, 5875–5882 (2015).
Burton, L. A. & Walsh, A. Phase stability of the earth-abundant tin sulfides SnS, SnS2, and Sn2S3. J. Phys. Chem. C 116, 24262–24267 (2012).
Perdew, J. P. & Zunger, A. Self-interaction correction to density-functional approximations for many-electron systems. Phys. Rev. B 23, 5048 (1981).
Giannozzi, P. et al. QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials. J. Phys. Condens. Matter 21, 395502 (2009).
Rappe, A. M., Rabe, K. M., Kaxiras, E. & Joannopoulos, J. D. Optimized pseudopotentials. Phys. Rev. B 41, 1227 (1990).
Zhang, S. B. & Wei, S.-H. Surface energy and the common dangling bond rule for semiconductors. Phys. Rev. Lett. 92, 086102 (2004).
Gygi, F. Architecture of Qbox: A scalable first-principles molecular dynamics code. IBM J. Res. Dev. 52, 137–144 (2008).
Schlipf, M. & Gygi, F. Optimization algorithm for the generation of ONCV pseudopotentials. Comput. Phys. Commun. 196, 36 (2015).
Perdew, J., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865 (1996).
Perdew, J., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple [Phys. Rev. Lett. 77, 3865 (1996)], Phys. Rev. Lett. 78, 1396 (1997).
Acknowledgements
V. Kamysbayev helped with the elemental analysis of the samples. V.S. was primarily supported by the University of Chicago Materials Research Science and Engineering Center, funded by NSF under award no. DMR-1420709. G.G., E.J. and D.T. were supported by MICCoM as part of the Computational Materials Sciences Program funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), Materials Sciences and Engineering Division (5J-30161-0010A). E.S. and S.W. were supported by the German Ministry of Education and Research (BMBF) within the NanoMatFutur programme, grant no. 13N12972. Supercomputer time provided by NERSC (project no. 35687) and the Max-Planck Computing and Data Facility, Garching, is acknowledged.
Author information
Authors and Affiliations
Contributions
S.W. and G.G. conceived and designed the calculations. E.S. performed the calculations. D.T. conceived and designed the experiments. V.S. and E.J. performed the experiments. The manuscript was written by D.T., G.G. and S.W. All the authors discussed the results and commented on the manuscript.
Corresponding author
Ethics declarations
Competing interests
The authors declare no competing interests.
Additional information
Publisher’s note: Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Supplementary information
Supplementary Information
Supplementary Text, Supplementary Figures 1–4
Rights and permissions
About this article
Cite this article
Scalise, E., Srivastava, V., Janke, E. et al. Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids. Nature Nanotech 13, 841–848 (2018). https://doi.org/10.1038/s41565-018-0189-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1038/s41565-018-0189-9
This article is cited by
-
Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots
Nature Communications (2023)
-
Hidden interfaces revealed on an atomistic level
Nature Nanotechnology (2018)