The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces challenges such as interface imperfection and gate current leakage for an ultrathin silicon channel1,2. For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration1,2. However, further progress towards 2D electronics is hindered by factors such as the lack of a high dielectric constant (κ) dielectric with an atomically flat and dangling-bond-free surface3,4. Here, we report a facile synthesis of a single-crystalline high-κ (κ of roughly 16.5) van der Waals layered dielectric Bi2SeO5. The centimetre-scale single crystal of Bi2SeO5 can be efficiently exfoliated to an atomically flat nanosheet as large as 250 × 200 μm2 and as thin as monolayer. With these Bi2SeO5 nanosheets as dielectric and encapsulation layers, 2D materials such as Bi2O2Se, MoS2 and graphene show improved electronic performances. For example, in 2D Bi2O2Se, the quantum Hall effect is observed and the carrier mobility reaches 470,000 cm2 V−1 s−1 at 1.8 K. Our finding expands the realm of dielectric and opens up a new possibility for lowering the gate voltage and power consumption in 2D electronics and integrated circuits.
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The data that support the findings of this study are available from the corresponding author upon reasonable request.
All computational data are presented in the paper.
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This work was supported by the National Natural Science Foundation of China (grant nos. 21920102004, 52021006, T2188101, 52072043, 92164205, 22205011, 21733001 and 22105009), Beijing National Laboratory for Molecular Sciences (grant no. BNLMS-CXTD-202001), the Tencent Foundation (XPLORER PRIZE), National Key R&D Program of China (grant no. 2020YFA0308900), Molecular Materials and Nanofabrication Laboratory in the College of Chemistry at the Peking University, and the Electron Microscopy Laboratory of the Peking University. P.G. acknowledges support from National Key R&D Program of China (2019YFA0708200) and the National Natural Science Foundation of China (grant nos. 52125307, 11974023 and 52021006). H.F. and B.Y. acknowledge support from the National Natural Science Foundation of China (grant no. 12104072). Numerical computations were performed on Hefei Advanced Computing Center. J. Yu and K.L. acknowledge support from the Welch Foundation grant F-1814.
The authors declare no competing interests.
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Zhang, C., Tu, T., Wang, J. et al. Single-crystalline van der Waals layered dielectric with high dielectric constant. Nat. Mater. (2023). https://doi.org/10.1038/s41563-023-01502-7