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Lowering the threshold for bioelectronics

A high-speed, high-gain enhancement-mode ion-gated transistor shows promise for low-power chronically implanted bioelectronic systems.

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Fig. 1: High-performance rectifying circuits based on enhancement and depletion mode internal ion-gated transistors (e-IGT and d-IGT, respectively).


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Correspondence to Yoeri van de Burgt.

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Keene, S., van de Burgt, Y. Lowering the threshold for bioelectronics. Nat. Mater. 19, 584–586 (2020).

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