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ORGANIC ELECTROCHEMICAL TRANSISTORS

Lowering the threshold for bioelectronics

Nature Materials volume 19, pages 584–586 (2020)Cite this article

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A high-speed, high-gain enhancement-mode ion-gated transistor shows promise for low-power chronically implanted bioelectronic systems.

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Fig. 1: High-performance rectifying circuits based on enhancement and depletion mode internal ion-gated transistors (e-IGT and d-IGT, respectively).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA

    Scott Keene

  2. Microsystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, Eindhoven, the Netherlands

    Yoeri van de Burgt

Authors
  1. Scott Keene
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  2. Yoeri van de Burgt
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Correspondence to Yoeri van de Burgt.

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Keene, S., van de Burgt, Y. Lowering the threshold for bioelectronics. Nat. Mater. 19, 584–586 (2020). https://doi.org/10.1038/s41563-020-0623-x

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