Reducing the thickness of an amorphous conductive indium tin oxide layer down to a few nanometres has enabled the realization of 40-nm-long channel transistors with remarkable operating characteristics.
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Anthopoulos, T.D. Ultrathin channels make transistors go faster. Nat. Mater. 18, 1033–1034 (2019). https://doi.org/10.1038/s41563-019-0489-y
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