Switching by topological insulators

Magnetization in magnetoresistive memory devices can be controlled at room temperature by spin–orbit torques originating from the surface states of topological insulators.

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Fig. 1: Evolution of spin–orbit torque (SOT) switching from transition metal-based heterostructures to topological insulator (TI)-based heterostructures.
Fig. 2: Power consumption of spin–orbit torque (SOT) switching.


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Correspondence to Chi-Feng Pai.

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Pai, C. Switching by topological insulators. Nature Mater 17, 755–757 (2018) doi:10.1038/s41563-018-0146-x

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