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MEMRISTIVE DEVICES

Tightening grip

Engineering channels for ion transport in a SiGe solid-state electrolyte layer allows one to significantly decrease the spatial and temporal variations of the electrical characteristics in resistive switching memories.

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Affiliations

  1. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, USA

    • Dmitri B. Strukov

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Correspondence to Dmitri B. Strukov.