News & Views | Published:

MEMRISTIVE DEVICES

Tightening grip

Nature Materialsvolume 17pages293295 (2018) | Download Citation

Engineering channels for ion transport in a SiGe solid-state electrolyte layer allows one to significantly decrease the spatial and temporal variations of the electrical characteristics in resistive switching memories.

  • Subscribe to Nature Materials for full access:

    $59

    Subscribe

Additional access options:

Already a subscriber?  Log in  now or  Register  for online access.

References

  1. 1.

    Choi, S. et al. Nat. Mater. https://doi.org/10.1038/s41563-017-0001-5 (2017).

  2. 2.

    Wong, H.-S. P. et al. Proc. IEEE 100, 1951–1970 (2012).

  3. 3.

    Valov, I., Waser, R., Jameson, J. R. & Kozicki, M. N. Nanotechnology 22, 254003 (2011).

  4. 4.

    Yang, J. J., Strukov, D. B. & Stewart, D. R. Nat. Nanotech. 8, 13–24 (2013).

  5. 5.

    Strukov, D. B. Appl. Phys. A 122, 302 (2016).

  6. 6.

    Bersuker, G. et al. J. Comput. Electron. 16, 1085–1094 (2017).

  7. 7.

    Alibart, F., Zamanidoost, E. & Strukov, D. B. Nat. Commun. 4, 2072 (2013).

  8. 8.

    Lee, J., Du, C., Sun, K., Kioupakis, E. & Lu, W. D. ACS Nano 10, 3571–3579 (2016).

  9. 9.

    Adam, G., Hoskins, B. D., Prezioso, M. & Strukov, D. B. Nano Res. 9, 3914–3923 (2016).

  10. 10.

    Goswami, S. et al. Nat. Mater. 16, 1216–1224 (2017).

Download references

Author information

Affiliations

  1. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, USA

    • Dmitri B. Strukov

Authors

  1. Search for Dmitri B. Strukov in:

Corresponding author

Correspondence to Dmitri B. Strukov.

About this article

Publication history

Published

DOI

https://doi.org/10.1038/s41563-018-0020-x

Rights and permissions

To obtain permission to re-use content from this article visit RightsLink.