Engineering channels for ion transport in a SiGe solid-state electrolyte layer allows one to significantly decrease the spatial and temporal variations of the electrical characteristics in resistive switching memories.
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References
Choi, S. et al. Nat. Mater. https://doi.org/10.1038/s41563-017-0001-5 (2017).
Wong, H.-S. P. et al. Proc. IEEE 100, 1951–1970 (2012).
Valov, I., Waser, R., Jameson, J. R. & Kozicki, M. N. Nanotechnology 22, 254003 (2011).
Yang, J. J., Strukov, D. B. & Stewart, D. R. Nat. Nanotech. 8, 13–24 (2013).
Strukov, D. B. Appl. Phys. A 122, 302 (2016).
Bersuker, G. et al. J. Comput. Electron. 16, 1085–1094 (2017).
Alibart, F., Zamanidoost, E. & Strukov, D. B. Nat. Commun. 4, 2072 (2013).
Lee, J., Du, C., Sun, K., Kioupakis, E. & Lu, W. D. ACS Nano 10, 3571–3579 (2016).
Adam, G., Hoskins, B. D., Prezioso, M. & Strukov, D. B. Nano Res. 9, 3914–3923 (2016).
Goswami, S. et al. Nat. Mater. 16, 1216–1224 (2017).
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Strukov, D.B. Tightening grip. Nature Mater 17, 293–295 (2018). https://doi.org/10.1038/s41563-018-0020-x
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DOI: https://doi.org/10.1038/s41563-018-0020-x
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