Exploiting intervalley scattering to harness hot carriers in III–V solar cells

Abstract

Hot carrier solar cells offer the potential to exceed the Shockley–Queisser limit. So far, however, there has been no clear route to achieve this result. Recently, the exploitation of the satellite valleys of the solar absorber material has been proposed as a feasible approach to harness hot carriers. Here, we show that, upon photoinduced and field-aided intervalley scattering to upper L-valleys, hot carriers can be harnessed in InGaAs/AlInAs heterojunctions at voltages defined by the upper valley (~1.25 V in the ideal case) rather than the bandgap of the InGaAs absorber (0.75 eV) under practical operational conditions. The efficiency of the present system does not exceed the single bandgap limit due to a mismatch in the valley degeneracy across the n+-AlInAs/n-InGaAs interface. However, we suggest that this is not a fundamental limitation to the realization of a hot carrier solar cell.

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Fig. 1: InGaAs band structure and sample schematic.
Fig. 2: Photoluminescence measurements with 442 nm and 1,064 nm excitation.
Fig. 3: JV measurements with 442 nm, 1,064 nm and 1-Sun illumination.
Fig. 4: Calculated band alignments and electric field distribution for several applied biases.
Fig. 5: Concentrated JV and comparison with optimal JV.

Data availability

All the data generated or analysed during this study are included in this published article and its Supplementary Information files. The data that support the plots within this paper are available from the corresponding authors upon reasonable request.

References

  1. 1.

    Ross, R. T. & Nozik, A. J. Efficiency of hot-carrier solar energy converters. J. Appl. Phys. 53, 3813–3818 (1982).

    Article  Google Scholar 

  2. 2.

    Shockley, W. & Queisser, H. J. Detailed balance limit of efficiency of p-n junction solar cells. J. Appl. Phys. 32, 510–519 (1961).

    Article  Google Scholar 

  3. 3.

    Dimmock, J. A. R., Day, S., Smith, K., Kauer, M. & Heffernan, J. Demonstration of a hot-carrier photovoltaic cell. Prog. Photovolt. 22, 151–160 (2014).

    Article  Google Scholar 

  4. 4.

    Nguyen, D.-T. et al. Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature. Nat. Energy 3, 236–241 (2018).

    Article  Google Scholar 

  5. 5.

    Hirst, L. C., Walters, R. J., Fuhrer, M. F. & Ekins-Daukes, N. J. Experimental demonstration of hot-carrier photocurrent in an InGaAs quantum well solar cell. Appl. Phys. Lett. 104, 231115 (2014).

    Article  Google Scholar 

  6. 6.

    Rodière, J. et al. Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures. Appl. Phys. Lett. 106, 183901 (2015).

    Article  Google Scholar 

  7. 7.

    Yao, Y. & König, D. Comparison of bulk material candidates for hot carrier absorber. Sol. Energy Mater. Sol. Cells 140, 422–427 (2015).

    Article  Google Scholar 

  8. 8.

    Conibeer, C. J. et al. Slowing of carrier cooling in hot carrier solar cells. Thin Solid Films 516, 6948–6953 (2008).

    Article  Google Scholar 

  9. 9.

    Gibelli, F., Lombez, L. & Guillemoles, J.-F. Accurate radiation temperature and chemical potential from quantitative photoluminescence analysis of hot carrier populations. J. Phys. Condens. Matter 29, 06LT02 (2016).

    Article  Google Scholar 

  10. 10.

    Ryan, J. F. et al. Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures. Phys. Rev. Lett. 53, 1841–1844 (1984).

    Article  Google Scholar 

  11. 11.

    Le Bris, A. et al. Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers. Energy Environ. Sci. 5, 6225–6232 (2012).

    Article  Google Scholar 

  12. 12.

    Hirst, L. C. et al. Hot carriers in quantum wells for photovoltaic efficiency enhancement. IEEE J. Photovolt. 4, 244–252 (2014).

    Article  Google Scholar 

  13. 13.

    Hirst, L. C. et al. Enhanced hot-carrier effects in InAlAs/InGaAs quantum wells. IEEE J. Photovolt. 4, 1526–1531 (2014).

    Article  Google Scholar 

  14. 14.

    Ferry, D. K. In search of a true hot carrier solar cell. Semicond. Sci. Technol. 34, 044001 (2019).

    Article  Google Scholar 

  15. 15.

    Whiteside, V. R. et al. The role of intervalley scattering in hot carrier transfer and extraction in type-II InAs/AlAsSb quantum well solar cells. Semicond. Sci. Technol. 34, 094001 (2019).

    Article  Google Scholar 

  16. 16.

    Clady, R. et al. Interplay between the hot phonon effect and intervalley scattering on the cooling rate of hot carriers in GaAs and InP. Prog. Photovolt. 20, 82–92 (2012).

    Article  Google Scholar 

  17. 17.

    Grann, E. D., Tsen, K. T. & Ferry, D. K. Non-equilibrium phonon dynamics and electron distribution functions in InP and InAs. Phys. Rev. B 53, 9847–9851 (1996).

    Article  Google Scholar 

  18. 18.

    Lugli, P. Non-equilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells. Phys. Rev. Lett. 59, 716–719 (1987).

    Article  Google Scholar 

  19. 19.

    Prabhu, S. S., Vengurlekar, A. S., Roy, S. K. & Shah, J. Non-equilibrium dynamics of hot carrier and hot phonons in CdSe and GaAs. Phys. Rev. B 51, 14233–14246 (1995).

    Article  Google Scholar 

  20. 20.

    Gunn, J. B. Microwave oscillations of current in III-V semiconductors. Solid State Commun. 1, 88–91 (1963).

    Article  Google Scholar 

  21. 21.

    Ridley, B. K. & Watkins, T. B. The possibility of negative resistance effects in semiconductors. Proc. Phys. Soc. 78, 293–304 (1961).

    Article  Google Scholar 

  22. 22.

    Ayubi-Moak, J. S. et al. Simulation of ultra-sub-micron-gate In0.52Al0.48As/In0.75Ga0.25As/In0.52Al0.48As pseudomorphic HEMTs using a full-band Monte Carlo simulator. IEEE Trans. Electron Devices 54, 2327–2338 (2007).

    Article  Google Scholar 

  23. 23.

    Akis, R. et al. Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors. J. Phys. Condens. Matter 20, 384201 (2008).

    Article  Google Scholar 

  24. 24.

    Rosenwaks, Y. et al. Hot-carrier cooling in GaAs: quantum wells versus bulk. Phys. Rev. B. 48, 14675–14678 (1993).

    Article  Google Scholar 

  25. 25.

    Wurfel, P. The chemical potential of radiation. J. Phys. Chem. C 15, 3967–3985 (1982).

    Google Scholar 

  26. 26.

    Murdin, B. N. et al. Direct observation of the LO phonon bottleneck in wide GaAs/AlxGa1−xAs quantum wells. Phys. Rev. B 55, 5171–5176 (1997).

    Article  Google Scholar 

  27. 27.

    Conibeer., G. J. et al. Progress on hot carrier cells. Sol. Energy Mater. Sol. Cells 93, 713–719 (2009).

    Article  Google Scholar 

  28. 28.

    Conibeer, G. J. et al. Modelling of hot carrier solar cell absorbers. Sol. Energy Mater. Sol. Cells 94, 1516–1521 (2010).

    Article  Google Scholar 

  29. 29.

    Welland, I. & Ferry, D. K. Electron transport in the solar-relevant InAlAs. Semicond. Sci. Technol. 34, 064003 (2019).

    Article  Google Scholar 

  30. 30.

    Esmaielpour, H. et al. Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from CW photoluminescence in InGaAsP quantum well absorbers. Prog. Photovolt. 25, 782–790 (2017).

    Article  Google Scholar 

  31. 31.

    Ferry, D. K. Semiconductors Sec. 10.4, 11.4.4 (Macmillan, 1991).

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Acknowledgements

The authors acknowledge financial support from the National Science Foundation ECCS program through grant no. ECCS-1610062. This work was performed under the umbrella of the Oklahoma Photovoltaics Research Institute (OKPVRI) and the Center for Quantum Research and Technology (CQRT) at the University of Oklahoma.

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The devices were processed by H.E. and K.R.D. The data were taken and analysed by a combination of H.E., K.R.D. and V.R.W. at OU. Theoretical calculations were performed by D.K.F. at ASU. The materials were grown by molecular beam epitaxy at OU by T.D.M. under the supervision of M.B.S. All experimental work was performed in the group of I.R.S., whom also provided scientific and technical guidance, as well as project management. The manuscript was written by a combination of V.R.W., I.R.S. and D.K.F.

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Correspondence to Ian R. Sellers.

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Supplementary Information

Supplementary Figs. 1−6, discussion and refs. 1–2.

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Esmaielpour, H., Dorman, K.R., Ferry, D.K. et al. Exploiting intervalley scattering to harness hot carriers in III–V solar cells. Nat Energy 5, 336–343 (2020). https://doi.org/10.1038/s41560-020-0602-0

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